High electron mobility in metamorphic epitaxial InAs0.7Sb0.3 compound and its p-i-n photodetector

Abstract

Our study explores growth techniques and the electrical/optical behavior of InAs 0.7 Sb 0.3 compounds on GaAs substrates, utilizing various metamorphic buffer layers. The InAlSb graded -buffer layer emerged as the most promising, displaying a remarkable electron mobility of 26,370 cm/V center dot s, a record high. It signifies excellent lateral crystal quality for room -temperature carrier transport. Meanwhile, the presence of micro -twins, evident in cross-sectional TEM images, degrades vertical crystal quality. We further assess crystal quality through lowtemperature Hall mobility and photoresponses, featuring reduced bowing parameters. These findings offer valuable insights for optimizing metamorphic growth platforms for ternary InAsSb compounds.