Mechanical and electrical properties of α-MoO3 belts under strain for flexible electronics applications

Authors
Ma, KihyunKim, SanghunKim, Ho YeonSeo, IntaeHan, Seung HoShin, SeungyongJang, Ho SeongKim, Dong Hun
Issue Date
2025-02
Publisher
Elsevier BV
Citation
Applied Surface Science, v.681
Abstract
This study investigated a straightforward and cost-effective method for synthesizing alpha-MoO3 belts and evaluated their potential as substrates for flexible electronic devices. Transparent alpha-MoO3 belts, featuring millimeter-scale side lengths and micrometer-scale thicknesses, were produced through a one-step sintering process using metallic molybdenum powder. When affixed to stretchable substrates, the alpha-MoO3 belts demonstrated robust mechanical stability under continuous and sustained tensile strain in the longitudinal direction. The belts exhibited a transmittance exceeding 68 % in the visible and near-infrared light regions. The current between gold dots on belts fixed to a stretchable polydimethylsiloxane substrate increased with the application of tensile strain. Furthermore, a CoFe2O4 thin film deposited at elevated temperature onto an alpha-MoO3 belt exhibited significant magnetic anisotropy. These findings introduce a novel and efficient approach for fabricating highly crystalline thin films on stretchable and bendable substrates using alpha-MoO3 belts.
Keywords
COFE2O4 THIN-FILMS; HETEROGENEOUS INTEGRATION; EPITAXIAL-GROWTH; MOO3; COERCIVITY; alpha-MoO 3 belts; Flexible electronics; Strain induced current; CoFe (2) O (4) thin films; Magnetic anisotropy
ISSN
0169-4332
URI
https://pubs.kist.re.kr/handle/201004/151001
DOI
10.1016/j.apsusc.2024.161512
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KIST Article > Others
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