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고효율 비 Cd 계 양자점 및 그 제조 방법

Author

장호성; 홍윤건; 고형덕; 김종민; 조소혜; 이승용; 강구민

Assignee

한국과학기술연구원

Regitration Date

2025-05-02

Registration No.

10-2805220

Application Date

2024-01-22

Application No.

10-2024-0009316

Country

KO

URI

https://pubs.kist.re.kr/handle/201004/152432

Appears in Collections:

KIST Patent > 2024

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