Strain-Driven Selective Stabilization of Metastable TiO2 Phases
- Authors
- Jeon, Jihoon; Jang, Myungsu; Park, Gwang Min; Kim, Minseok; Kim, Jongseo; Ye, Seungwan; Park, Yongjoo; Baek, Seung-Hyub; Kang, Jun-Yun; Kim, Seong Keun
- Issue Date
- 2025-09
- Publisher
- Wiley - V C H Verlag GmbbH & Co.
- Citation
- Small
- Abstract
- Stabilizing metastable TiO2 phases in thin films remains a significant challenge. This paper demonstrates a strain-driven approach for selectively stabilizing the metastable phases of orthorhombic TiO2-II and rutile using (111)-oriented face-centered cubic (FCC) metal substrates via low-temperature atomic layer deposition. Epitaxial FCC metal substrates, including Ir and Pt, exhibit a strong preferential (111) orientation and promote the formation of TiO2-II with a preferential (200) orientation through favorable lattice matching. In contrast, TiO2 grown on (111)-textured polycrystalline FCC metals crystallizes into rutile with a preferential (110) orientation despite identical growth conditions, which is attributed to strain relaxation arising from the random in-plane orientations of FCC metals. Compared to the stable anatase phase, TiO2-II films exhibit higher density (4.45-4.51 g cm-3), higher refractive indices, and higher dielectric constants (approximate to 75-77). These findings reveal that in-plane strain and lattice matching can be strategically utilized to engineer metastable TiO2 phases, offering a new approach for the phase-selective growth of functional oxide films at low temperatures.
- Keywords
- ATOMIC LAYER DEPOSITION; THIN-FILMS; GROWTH; RUTILE; CAPACITORS; THICKNESS; PRESSURE; RU; atomic layer deposition; metastable phase; rutile; TiO2-II
- ISSN
- 1613-6810
- URI
- https://pubs.kist.re.kr/handle/201004/153305
- DOI
- 10.1002/smll.202505427
- Appears in Collections:
- KIST Article > Others
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