Effects of Termination Process on the Structural and Optical Properties InAs Quantum Dots on GaAs

Abstract

The structural and optical properties of 3 monolayer (ML) thick InAs quantum dots (QDs) grown by migration-enhanced epitaxy (MEE), conventional molecular beam epitaxy (CON), and hybrid methods combining the two were investigated. The hybrid approaches included QD growth initiated with MEE and terminated with CON (MEE-CON) and the reverse sequence (CON-MEE). The results indicate that the deposition method used for the final 1 ML of InAs critically influences the structural and optical properties of the QDs. QDs with MEE termination on CON-initiated layers exhibited structural and optical features comparable to those grown entirely by MEE, and similar for the reverse case. These findings demonstrate that the final growth stage plays a decisive role in defining QD properties, regardless of the initial growth method.