| 1995-01 | New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface. | Kim Yong Tae; S. K. Kwak; C. S. Kwon; D. J. Kim; C. W. Lee; I. H. Choi; Min Suk-Ki |
| 1993-01 | Effects of nitrogen on the stress of plasma deposited tungsten and tungsten nitride thin films. | Kim Yong Tae; S. J. Lee; C. S. Kwon; Y. W. Park; C. C. Lee; C. W. Lee; Min Suk-Ki |
| 1996-06 | Formation of a thin nitrided GaAs layer. | Park Young Ju; KIM EUN KYU; Min Suk-Ki; Kim Seong Il; Han Il Ki; P. O'Keeffe; H. Mutoh; S. Hirose; K. Hara; H. Munekata; H. Kukimoto |
| 1998-04 | p-AlGaAs/p-GaAs/n-GaAs 이종접합 태양전지의 구조와 금속전극패턴의 최적화에 관한 분석 | KIM HEO JEN; 이대욱; 김태환; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
| 1993-01 | Atomic force microscopic observation in the surface morphologies and roughness of plasma deposited tungsten and tungsten nitride thin films. | Kim Yong Tae; C. S. Kwon; I. H. Choi; C. W. Lee; Min Suk-Ki |
| 1996-01 | Nitrogen effects of Ta-Si-N diffusion barrier in Si/Cu metallization. | Kim Yong Tae; S. P. Jeong; D. J. Kim; J. W. Park; Min Suk-Ki |
| 1996-01 | Study of temperature dependent conductivity of Ta, Ta-Si-N thin films. | Kim Yong Tae; S. P. Jeong; D. J. Kim; H. N. Lee; Min Suk-Ki |
| 1991-01 | 대기압 MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 . | Kim Seong Il; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG; Min Suk-Ki |
| 1994-01 | Comparison of high temperature thermal stability of Ru and RuO//2 schottky contact to GaAs. | Kim Yong Tae; S. K. Kwak; C. W. Lee; J. G. Lee; C. S. Kwon; K. S. Jung; Min Suk-Ki |
| 1994-01 | Post annealing characteristics of RF magnetron sputtered PbTiO//3 films. | Kim Yong Tae; H. N. Lee; J. G. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki |
