| 2017-10 | Heterogeneous Integration toward Monolithic 3D Chip | Kim, SangHyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-myeong; Ju, Gunwu; Kim, Han Sung; Kim, Hyung-jun; Lim, Hyeong Rak; Han, Jae-Hoon; Kang, ChangMo; Lee, Dong Seon; Song, Jin Dong; Choi, Won Jun; LIM, HEE JEONG |
| 2019-06 | Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection | Geum, Dae-Myeong; Kim, SangHyeon; Kim, SeongKwang; Yoon, Euijoon; Kylun, JiHoon; Song, Jindong; Choi, Won Jun; Kang, SooSeok |
| 2018-08 | Design of efficient phase shifter using InGaAs-InAs/Ge SIS capacitor for mid-IR photonics application | Han, Jae-Hoon; Kim, Hyung-Jun; Kim, SangHyeon; Song, Jindong; Choi, Won Jun |
| 2016-12 | Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use | Kim, Seong Kwang; Shim, Jaephil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Kim, Yeon-Su; Kim, Sang Hyeon; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-jun; Kim, Dong Myong; Kang, Hang-Kyu |
| 2017-01-05 | High-speed epitaxial lift-off for III-V-on-insulator transistors on Si substrates | Kim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun |
| 2005-01-01 | Optical and electrical characterization of quantum dot infrared photodetector structure treated with Hydrogen-plasma | Choi, Won Jun |
| 2005-01-01 | 1/f noise of GaAs Schottky diodes embedded with self-assembled InAs quantum dots | Choi, Won Jun |
| 2005-10-01 | Far-Infrared/THz Photodetector with Self-assembled Quantum Dots | Choi, Won Jun |
| 2003-11-01 | Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy | Choi, Won Jun |
| 2000-10-01 | Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH3 flow rate for the growth of SiNx capping | Choi, Won Jun |
