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Issue Date | Title | Author(s) |
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2019-04 | New material design of fast switching phase change memory as the benchmark for FD-SOI devices | Kim, Yong Tae; Choi, Minho; Gamiz, Francisco; Jhon, Young Min; Kwon, Sehyun |
2001-10-01 | Low-temperature process of (Y0.95,Bi0.05)MnO3 ferroelectric thin film and its structural and electrical properties | Kim, Yong Tae |
2000-06-28 | Improvement of memory windows in YMnO3/Si ferroelectric gate FET | Kim, Yong Tae |
2001-10-11 | MFM 구조의 Bi 첨가된 강유전체 YMnO3 박막의 결정구조와 유전특성에 관한 연구 | Kim, Yong Tae |
2001-06-01 | Memory window of metal-ferroelectric-insulator-silicon structures using strained (Ba,Sr)TiO3 film | Kim, Yong Tae |
2001-11-02 | 새로운 열처리법을 통한 SrBi2Ta2O9 박막의 저온 성장 | Kim, Yong Tae |
2001-04-16 | A method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment | Kim, Yong Tae |
2000-07-24 | Enhancement of the electrical and physical properties of Cu/W-N/HSQ interconnection scheme by NH3 plasma treatment | Kim, Yong Tae |
2000-07-24 | Effects of Y to Mn ratio on memory window in the YMnO3 ferroelectric gate | Kim, Yong Tae |
2001-09-01 | Structure and ferroelectric properties of Bi modified YMnO3 films depostied on Pt electrodes | Kim, Yong Tae |
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