Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel
- Authors
- 전대영; 박지민; Park, So Jeong; Kim, Gyu-Tae
- Issue Date
- 2023-02
- Publisher
- American Chemical Society
- Citation
- ACS Applied Materials & Interfaces, v.15, no.6, pp.8298 - 8304
- Abstract
- Junctionless transistors are suitable for sub-3 nm applications because of their extremely simple structure and high electrical performance, which compensate for short-channel effects. Two-dimensional semiconductor transition-metal dichalcogenide materials, such as MoS2, may also resolve technical and fundamental issues for Si-based technology. Here, we present the first junctionless electric-double-layer field-effect transistor with an electrostatically highly doped 5 nm thick MoS2 channel. A double-gated MoS2 transistor with an ionic-liquid top gate and a conventional bottom gate demonstrated good transfer characteristics with a 104 on?off current ratio, a 70 mV dec?1 subthreshold swing at a 0 V bottom-gate bias, and drain-current versus top-gate-voltage characteristics were shifted left significantly with increasing bottom-gate bias due to an electrostatically increased overall charge carrier concentration in the MoS2 channel. When a bottom-gate bias of 80 V was applied, a shoulder and two clear peak features were identified in the transconductance and its derivative, respectively; this outcome is typical of Si-based junctionless transistors. Furthermore, the decrease in electron mobility induced by a transverse electric field was reduced with increasing bottom-gate bias. Numerical simulations and analytical models were used to support these findings, which clarify the operation of junctionless MoS2 transistors with an electrostatically highly doped channel.
- Keywords
- NANOWIRE TRANSISTORS; GATE; NOISE; junctionless transistors; two-dimensional semiconductor transition-metal dichalcogenide; double-gated MoS2 transistor; ionic-liquid gate; electrostatically highly doped channel; shoulder feature in transconductance; two peaks in transconductance derivative; reduced mobility degradation
- ISSN
- 1944-8244
- URI
- https://pubs.kist.re.kr/handle/201004/75804
- DOI
- 10.1021/acsami.2c19596
- Appears in Collections:
- KIST Article > 2023
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