Series Resistance Effects on the Back-gate Biased Operation of Junctionless Transistors

Abstract

Unique electrical properties of junctionless transistors (JLTs) with back-gate bias (Vgb) effects are investigated and visualized by numerical simulations. Charge coupling effects between front and back interfaces influenced threshold voltage (Vth) and flat-band voltage (Vfb) of JLTs. In addition, series resistance (Rsd) of JLTs was dependent on Vgb and back-biasing behavior of JLT with a shorter channel was deviated from intrinsic characteristics due to considerable Rsd effects. The Rsd was extracted by transfer length method (TLM) and its effects were deembedded using simple equation.