DSpace at KISTKIST Conference Paper2006

Electrical characteristics of nano-crystal Si particles for nano floating gate memory

Authors
Yang, J.S.; Kim, S.-I.; Park, J.H.; Cho, W.J.; Kim, Y.T.
Issue Date
2006-10
Publisher
IEEE
Citation
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, pp.628 - 629
Abstract
Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.
ISSN
0000-0000
URI
https://pubs.kist.re.kr/handle/201004/81547
DOI
10.1109/NMDC.2006.4388936
Appears in Collections:
KIST Conference Paper > 2006
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