Electrical characteristics of nano-crystal Si particles for nano floating gate memory

Abstract

Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.