Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Won Jun | - |
| dc.date.accessioned | 2024-01-12T10:10:26Z | - |
| dc.date.available | 2024-01-12T10:10:26Z | - |
| dc.date.created | 2022-01-14 | - |
| dc.date.issued | 2000-10-01 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/84325 | - |
| dc.title | Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH3 flow rate for the growth of SiNx capping | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | 미국, pp.0 | - |
| dc.citation.title | 미국 | - |
| dc.citation.startPage | 0 | - |
| dc.citation.endPage | 0 | - |
| dc.relation.isPartOf | American Physical Society meeting - 직접입력 | - |
- Appears in Collections:
- KIST Conference Paper > 2000
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