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유전체덮개 양자우물 무질서공정에서 SiNx 덮개층 성장시 NH3 유량비 조절을 통한 InGaAs/InGaAsP 양자우물의 밴드갭 조절

Authors

Kim, Sun Ho

Issue Date

2000-02-01

Citation

한국광학회, pp.256 - 257

URI

https://pubs.kist.re.kr/handle/201004/84410

Appears in Collections:

KIST Conference Paper > 2000

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