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dc.contributor.author박동균-
dc.contributor.authorPark, J.-W.-
dc.contributor.authorCheong, D.-S.-
dc.contributor.authorLee, J.-K.-
dc.date.accessioned2024-01-12T10:12:23Z-
dc.date.available2024-01-12T10:12:23Z-
dc.date.created2022-02-28-
dc.date.issued2000-01-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/84416-
dc.description.abstractPb(Mg1/3Nb2/3)O3-PbTiO3 [PMN-PT] films were deposited by the radio-frequency (r.f.) magnetron sputtering technique and post-annealed. The growth of PMN-PT films as a function of MgO concentration in targets, annealing temperature and heating/cooling rate during annealing was studied. The films deposited from 66 mol% MgO excess target showed good perovskite structure in this study. For film deposited from the target with 66mol% MgO excess content and post-annealed conventionally at 750°C for 10 minutes in oxygen flow, preferential (111) orientation of the perovskite phase and pyrochlore phase of less than 3% was observed. And the room temperature dielectric constant was 2500 at 1kHz. Dielectric and structural properties exhibited relaxor-like behavior. Excess MgO in PMN-PT was homogeneously precipitated and dispersed in grain and grain boundary. The number of MgO nano-particles increased with increasing MgO content in PMN-PT targets.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleRelaxor behavior of MgO dispersed-Pb(Mg1/3Nb2/3)O3-PbTiO3 (90/10) nanocomposite thin films-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation12th IEEE International Symposium on Applications of Ferroelectrics, pp.937 - 940-
dc.citation.title12th IEEE International Symposium on Applications of Ferroelectrics-
dc.citation.startPage937-
dc.citation.endPage940-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceHonolulu, HI-
dc.citation.conferenceDate2000-07-21-
dc.relation.isPartOfIEEE International Symposium on Applications of Ferroelectrics-
dc.identifier.scopusid2-s2.0-0034474419-
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KIST Conference Paper > 2000
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