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Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx cap

Authors

Choi, Won Jun; Lee, Seok

Issue Date

1999-11-01

Citation

미국, pp.515 - 518

URI

https://pubs.kist.re.kr/handle/201004/84878

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KIST Conference Paper > Others

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