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초고집적　기억소자　및　비기억소자를　위한WBxNy확산방지막　제조방법　및　 그를　이용한　다층금속연결　배선방법

Author

김동준; 김용태

Assignee

한국과학기술연구원

Regitration Date

2000-02-10

Registration No.

255130

Application Date

1997-11-04

Application No.

97-57885

Country

KO

URI

https://pubs.kist.re.kr/handle/201004/85154

Appears in Collections:

KIST Patent > Others

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