Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiNx capping layer for dielectric cap

Authors
Choi, Won Jun
Issue Date
1997-01-01
Citation
미국, pp.419
URI
https://pubs.kist.re.kr/handle/201004/85551
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE