Thin film phosphor prepared by physical vapour deposition for FED application

Authors
Lee, Yun HiSong, Man HoJu, Byeong KwonOh, Myung Hwan
Issue Date
1996-07
Publisher
IEEE
Citation
1996 9th International Vacuum Microelectronics Conference, IVMC, pp.619 - 622
Abstract
We fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5 nm thick Sn-doped In2O3 film. CL emission spectrum of sputtered ZnO:Zn (250 nm) film shows a two broad peaks centered 540 nm and 600 nm. The spectra characteristics of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effect of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength.
ISSN
0000-0000
URI
https://pubs.kist.re.kr/handle/201004/85925
Appears in Collections:
KIST Conference Paper > Others
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