고속 에피택셜 리프트오프를 이용한 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자

Author
김상현최원준박민수금대명
Assignee
한국과학기술연구원
Regitration Date
2017-05-29
Registration No.
10-1743017
Application Date
2015-05-19
Application No.
2015-0069836
Country
KO
URI
https://pubs.kist.re.kr/handle/201004/86306
Appears in Collections:
KIST Patent > 2015
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