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AIGaAs 삽입층에 의한 InGaAs 양자점의 방사 파장 조정방법

Author

박용주; 이정일; 한일기; 김은규; 최원준; 박세기

Assignee

한국과학기술연구원

Regitration Date

2005-05-13

Registration No.

10-0491073

Application Date

2001-12-31

Application No.

2001-0088866

Country

KO

URI

https://pubs.kist.re.kr/handle/201004/87531

Appears in Collections:

KIST Patent > 2001

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