Less surface roughness scattering effects in highly doped Si-channel and ambipolar conduction behavior with Schottky-barrier contacts

Authors
Dae-Young JeonSo Jeong ParkGyu-Tae KimGerard GhibaudoSebastian PreglThomas MikolajickWalter M. Weber
Publisher
6.12~15, 중국
Citation
ICASS2017
Keywords
Scattering; Junctionless transistors; ambipolar conduction; Schottky-barrier; I-V maps
URI
https://pubs.kist.re.kr/handle/201004/87663
Appears in Collections:
KIST Conference Paper > Others
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