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dc.contributor.authorEy Goo Kang-
dc.contributor.authorEun Sik Jung-
dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-12T20:06:46Z-
dc.date.available2024-01-12T20:06:46Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/95708-
dc.languageEnglish-
dc.subjectIGBT-
dc.subjectpower device-
dc.subjectField stop-
dc.subjectTrench gate-
dc.titleElectrical characteristics of IGBT using a field stop trench gate structure-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAsia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), pp.12 - 15-
dc.citation.titleAsia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)-
dc.citation.startPage12-
dc.citation.endPage15-
dc.citation.conferencePlaceKO-
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