Electrical characteristics of IGBT using a field stop trench gate structure

Authors
Ey Goo KangEun Sik JungKim, Yong Tae
Citation
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), pp.12 - 15
Keywords
IGBT; power device; Field stop; Trench gate
URI
https://pubs.kist.re.kr/handle/201004/95708
Appears in Collections:
KIST Conference Paper > Others
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