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dc.contributor.authorYeonghyeon Hwang-
dc.contributor.authorWon-Ju Cho-
dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-12T20:06:47Z-
dc.date.available2024-01-12T20:06:47Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/95709-
dc.languageEnglish-
dc.subjectDiffusion barrier-
dc.subjectALD-
dc.subjectWN-
dc.subjectsurface treatment-
dc.titleComparison of thin film properties of WN diffusion barrier prepared by atomic layer deposition using metal organic and metal halide reactant gases-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAsia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), pp.124 - 127-
dc.citation.titleAsia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)-
dc.citation.startPage124-
dc.citation.endPage127-
dc.citation.conferencePlaceKO-
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