Effects of post-annealing temperature on electrical performances in amorphous SiInZnO thin film transistor

Authors
Kim, Bo SeulKim Do HyungYou DongyounLee Sang Yeol
Citation
한국전기전자재료학회
URI
https://pubs.kist.re.kr/handle/201004/97821
Appears in Collections:
KIST Conference Paper > Others
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