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dc.contributor.authorWu Zhe-
dc.contributor.authorPark Young Wook-
dc.contributor.authorHyung-Woo Ahn-
dc.contributor.authorLee Suyoun-
dc.contributor.authorJeung-hyun Jeong-
dc.contributor.authorJeong, Doo Seok-
dc.contributor.authorKwangsoo No-
dc.contributor.authorCHEONG, BYUNG KI-
dc.date.accessioned2024-01-12T23:06:28Z-
dc.date.available2024-01-12T23:06:28Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/99071-
dc.languageEnglish-
dc.titleImproved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTe-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMaterial Research Society-
dc.citation.titleMaterial Research Society-
dc.citation.conferencePlaceUS-
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