| - | Fabrication and characterization of homostructure GaAs δ -doped FETs. | KANG KWANG NHAM; Lee Jung Il; KIM YOUN; Han Il Ki; Min Suk-Ki; Y. J. Lee |
| - | Fabrication of GaAs/AlGaAs DH laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM MOO SUNG |
| - | Fabrication of HEMT employing delta-doping layer grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; 김현수 |
| - | Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD | 황성민; Kim Seong Il; 이달진; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM YOUN |
| - | Fabrication of in-plane gated transistor with electron-beam lighography technique | 한철구; 김광무; 정석구; 최범호; KIM EUN KYU; Min Suk-Ki; PARK JEONG HO |
| - | Fabrication of quantum structures by using patterned gallium oxide deposited GaAs substrates | Park Young Ju; Min Suk-Ki; KIM EUN KYU; 한철구; 김광무; 장영준; 오치성; PARK JEONG HO |
| - | Fabrication of quantum well high electron mobility transistor grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh |
| - | Fabrication of quantum well laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh |
| - | First-principles calculation of the phonon dispersion curves of silicon | PARK YOUNG KYUN; Kim Seong Il; 이지윤; Min Suk-Ki |
| 1996-06 | Formation of a thin nitrided GaAs layer. | Park Young Ju; KIM EUN KYU; Min Suk-Ki; Kim Seong Il; Han Il Ki; P. O'Keeffe; H. Mutoh; S. Hirose; K. Hara; H. Munekata; H. Kukimoto |
| - | Formation of silicon nano-crystallites by electron cyclotron resonance chemical vapor deposition and ion beam assisted electron beam deposition | KIM EUN KYU; Min Suk-Ki; CHOI WON CHEOL; PARK JONG YEUN |
| - | Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array layer. | SON CHANG-SIK; KIM TAE-GEUN; Kim Seong Il; PARK JEONG HO; 황성민; Min Suk-Ki; KIM EUN KYU; KPARK KYUNG HYUN |
| - | GaAs/AlGaAs buried channel stripe lasers by single-stage metalorganic chemical vapor deposition on V-grooved substrate | KIM EUN KYU; KIM TAE-GEUN; SON CHANG-SIK; 황성민; Min Suk-Ki |
| - | Growth and characterization of GaAs layer by molecular beam epitaxy. | KIM EUN KYU; Min Suk-Ki; S. W. Lee; H. Y. Cho; H. S. Kim; J. H. Park |
| - | Growth behavior on V-grooved high miller index GaAs substrates by MOCVD. | Park Young Ju; KIM MOO SUNG; KIM YOUN; LEE MIN-SUK; Kim Seong Il; Min Suk-Ki |
| - | Growth interruption dependence of self-assembling behavior of InGaAs quantum dots on exact and misoriented (100) GaAs substrates | KIM YOUN; Min Suk-Ki; KIM EUN KYU; MIN BYUNG DON |
| - | Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | High uniform growth of epilayers by LPMOCVD. | KIM MOO SUNG; KIM YOUN; CHO HOON YOUNG; 강명주; Kim Seong Il; Min Suk-Ki |
| - | Improved growth techniques for GaAs single crystal. | Park Young Ju; PARK SEUNG-CHEOL; 한철원; Min Suk-Ki; 심광보 |
| - | Ionization energy of Ge in AlGaAs | KIM HEO JEN; Kim Seong Il; CHOI WON CHEOL; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
| - | Laser direct dry etching for Al//0//.//3Ga//0//.//7As/GaAs multi-layer structure. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; 박세기; 이천 |
| - | Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근 |
| - | Lateral growth rate control of GaAs on patterned substrates by CCl//4 and CBr//4 during MOCVD. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; MIN BYUNG DON; Min Suk-Ki |
| - | Lateral growth rate enhancement on patterned GaAs substrates with CCl//4 by MOCVD. | KIM YOUN; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki |
| - | Lateral mode behavior of GaAs/AlGaAs DH laser diode by computer simulation. | Kim Seong Il; Min Suk-Ki |
| - | Luminescence study of carbon doped GaAs grown on GaAs(311)A substrate by MOCVD | KIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee; SON CHANG-SIK; CHOI WON CHEOL; Kim Seong Il |
| - | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | MOCVD 로 성장시킨 GaAs/AlGaAs DH laser diode 의 발진 특성 및 computer simulation 에 의한 횡모드 거동 . | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
| - | MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | MOCVD 에 의한 화합물반도체 에피 성장 기술 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
