| - | Carbon doping characteristics in GaAs grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim |
| - | Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
| - | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | SON CHANG-SIK; MIN BYUNG DON; 박만장; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
| - | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈 |
| - | Characteristics of C-doped GaAs and critical layer thickness. | Kim Seong Il; EOM KYUNG SOOK; KIM YOUN; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
| - | Characteristics of etching for Al//0//.//3Ga//0//.//7As/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; MIN BYUNG DON; KIM MOO SUNG; S. K. Park; C. Lee |
| - | Characteristics of laser dry etching for AlGaAs/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; 박세기; MIN BYUNG DON; KIM MOO SUNG; 이천 |
| - | Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; CHO HOON YOUNG |
| - | Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4. | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki; KIM YOUN |
| - | DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs. | KANG KWANG NHAM; Yoo Jong Lee; EOM KYUNG SOOK; KIM MOO SUNG |
| - | Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | SON CHANG-SIK; 황성민; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki; KIM EUN KYU; KIM YOUN |
| - | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; KANG JOON MO; 박양근; Min Suk-Ki |
| - | Epitaxial technology of compound semiconductor by MOCVD. | KIM MOO SUNG; KIM YOUN; EOM KYUNG SOOK; Kim Seong Il; Min Suk-Ki |
| - | Fabrication of GaAs/AlGaAs DH laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM MOO SUNG |
| - | Fabrication of HEMT employing delta-doping layer grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; 김현수 |
| - | Fabrication of quantum well high electron mobility transistor grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh |
| - | Fabrication of quantum well laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh |
| - | Growth behavior on V-grooved high miller index GaAs substrates by MOCVD. | Park Young Ju; KIM MOO SUNG; KIM YOUN; LEE MIN-SUK; Kim Seong Il; Min Suk-Ki |
| - | High uniform growth of epilayers by LPMOCVD. | KIM MOO SUNG; KIM YOUN; CHO HOON YOUNG; 강명주; Kim Seong Il; Min Suk-Ki |
| - | Lateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; KANG JOON MO; 황성민; 박양근 |
| - | Lateral growth rate control of GaAs on patterned substrates by CCl//4 and CBr//4 during MOCVD. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; MIN BYUNG DON; Min Suk-Ki |
| - | Lateral growth rate enhancement on patterned GaAs substrates with CCl//4 by MOCVD. | KIM YOUN; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki |
| - | MOCVD 로 성장시킨 GaAs/AlGaAs DH laser diode 의 발진 특성 및 computer simulation 에 의한 횡모드 거동 . | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
| - | MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | MOCVD 에 의한 화합물반도체 에피 성장 기술 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | Pulsed excimer laser annealing effects of ion implanted silicon on insulator. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; Kim Yong Tae; KIM CHUN KEUN; KIM MOO SUNG |
| - | Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs grown by MOCVD. | SON CHANG-SIK; KANG JOON MO; KIM YOUN; KIM MOO SUNG; Min Suk-Ki |
| - | Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs(311)A grown by molecular beam epitaxy(MBE). | SON CHANG-SIK; 전인상; 한철구; 이정훈; JIN HYOUN CHER; KIM MOO SUNG; Min Suk-Ki |
| - | Temperature dependence of the electrical properties of carbon doped GaAs. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG |
| - | Temperature-dependent PL spectra of quantum wire array and new technique for its application to laser. | SON CHANG-SIK; KIM TAE-GEUN; KPARK KYUNG HYUN; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki; PARK JEONG HO |
