| 2004-06 | Effect of Al composition on luminescence properties of rare-earth implanted into AlGaN | Yoshida, A; Wakahara, A; Nakanishi, Y; Okada, H; Ohshima, T; Itoh, H; Kim, YT |
| 2005-01 | Effects of annealing conditions on the crystallization and grain growth of metastable Ge2Sb2Te5 | Park, YJ; Lee, JY; Youm, MS; Kim, YT |
| 1999-09-15 | Effects of Bi-Pt alloy on electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si ferroelectric gate structure | Kim, YT; Shin, DS; Park, YK; Choi, IH |
| 1997-01 | Effects of bottom electrode on the structural and electrical properties of PbTiO3 ferroelectric thin films | Lee, HN; Kim, YT; Choh, SH |
| 2002-06-01 | Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures | Lee, SK; Kim, YT; Kim, SI; Lee, CE |
| 2003-11 | Effects of hydrogen annealing on the electrical properties of SrBi2Nb2O9 thin films | Kim, IS; Kim, YT; Kim, SI; Choi, IH |
| 2003-05 | Effects of implantation conditions on the luminescence properties of Eu-doped GaN | Nakanishi, Y; Wakahara, A; Okada, H; Yoshida, A; Ohshima, T; Itoh, H; Nakao, S; Saito, K; Kim, YT |
| 1998-09 | Effects of morphological changes of Pt/SrBi2Ta2O9 interface on the electrical properties of ferroelectric capacitor | Shin, DS; Lee, HN; Lee, CW; Kim, YT; Choi, IH |
| 2002-06 | Effects of NH3 plasma treatment on methyl silsequioxane for copper multi-level interconnect | Sim, HS; Kim, YT; Jeon, H |
| 2006-05 | Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier | Lee, CW; Kim, YT |
| 1998-03 | Effects of nitrogen ion implantation on the thermal stability of tungsten thin films | Kim, YT; Kwon, CS; Kim, DJ; Park, JW; Lee, CW |
| 2001-11 | Effects of post-annealing on the microstructure and ferroelectric properties of YMnO3 thin films on Si | Yoo, DC; Lee, JY; Kim, IS; Kim, YT |
| 2001-07 | Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN | Kim, JW; Kim, SI; Kim, YT; Kim, S; Sung, MY; Choi, IH |
| 2001-04 | Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer | Choi, HS; Kim, YT; Kim, SI; Choi, IH |
| 1998-03-23 | Electrical properties of a W-B-N Schottky contact to GaAs | Kim, YT; Lee, CW; Kim, DJ |
| 1998-08 | Electrical properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for nondestructive readout memory | Shin, DS; Lee, HN; Kim, YT; Choi, IH; Kim, BH |
| 2001-12 | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | Choi, HS; Park, KS; Hur, JS; Choi, IH; Kim, YT; Kim, SI |
| 1999-05 | Elliptical grain growth in the solid-phase crystallization of amorphous SrBi2Ta2O9 thin films | Choi, JH; Lee, JY; Kim, YT |
| 2004-03 | Equivalent circuit model for the electrical analysis of a spin bipolar transistor | Kim, YT; Lee, GY |
| 2005-02 | Ex vivo expansion of human umbilical cord blood-derived T-lymphocytes with homologous cord blood plasma | Kim, YM; Jung, MH; Song, HY; Yang, HO; Lee, ST; Kim, JH; Kim, YT; Nam, JH; Mok, JE |
| 1999 | Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy | Kim, SI; Park, YK; Kim, YT; Tan, HH; Jagadish, C |
| 2004-08 | Fabrication of MFISFETs with Pt/SrBi2Ta2O9/Y2O3/Si gate structure by developing an etch-stop process | Shim, SI; Kwon, YS; Kim, SI; Kim, YT; Park, JH |
| 2005-09 | Fabrication of Pt/Sr2Bi2Ta2O9/Y2O3/Si FET and sub-circuit model for full memory chip design | Shim, SI; Kim, IS; Park, MC; Kim, YT; Kim, SI; Lee, CW |
| 1998-03-20 | First observation of metal-mediated interligand tautomerism. Cobalt(III) complexes containing mixed pyridine-2-thiol and pyridine-2-thione ligands | Jung, OS; Kim, YT; Lee, YA; Chae, HK |
| 1997-01 | Formation of circular-shaped crystalline phases embedded in amorphous PbTiO3 thin films grown by MOCVD | Yom, SS; Wang, CH; Kim, YT |
| 2003-06 | Growth and characterization of triangular InGaAs/GaAs quantum wire structures grown by low-pressure metalorganic chemical vapor deposition | Kim, SI; Son, CS; Kim, YH; Kim, YT |
| 2001-02 | High-resolution transmission electron microscopy study on the solid-phase crystallization of amorphous SrBi2Ta2O9 thin films on Si | Choi, JH; Lee, JY; Kim, YT |
| 2004-11-01 | Hydrogen-induced atomic deformation in SrBi2Nb2O9 perovskite structure | Kim, IS; Choi, IH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY |
| 2003-11-01 | Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator | Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY; Choi, IH |
| 2004-01 | Improvement of ferroelectric properties of Pt-SrBi2Nb2O9-SiO2-Si gate structure through oxygen plasma rapid thermal annealing | Kim, IS; Kim, SI; Kim, YT |
