2010-03 | Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy | Ryu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G. |
2010-02 | Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate | Lim, J. Y.; Song, J. D.; Choi, W. J.; Yang, H. S. |
2014-04 | Effect of Growth Temperature and Quantum Structure on InAs/GaAs Quantum Dot Solar Cell | Park, M. H.; Kim, H. S.; Park, S. J.; Song, J. D.; Kim, S. H.; Lee, Y. J.; Choi, W. J.; Park, J. H. |
2011-05 | Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs0.32Sb0.68 Buffer Layer | Kim, S. Y.; Song, J. D.; Kim, T. W. |
2007-09-01 | Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures | Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. |
2007-07-15 | Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode | Ryu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H. |
2014-08 | Effects of Growth and Annealing Temperatures on the Structural and the Optical Properties of In0.6Al0.4As/Al0.4Ga0.6As Quantum Dots | Kim, S. Y.; Song, J. D.; Han, I. K.; Kim, T. W. |
2012-07 | Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions | Kim, S. Y.; Song, J. D.; Han, I. K.; Kim, T. W. |
2008-11 | Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures | Shin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G. |
2012-11 | Electronic states and interband transitions of strained InzGaxAl1-z-xP/In0.5Al0.5P multiple quantum wells | Kim, D. H.; You, J. H.; Kim, T. W.; Song, J. D.; Yoo, K. H.; Kim, S. Y. |
2014-02-03 | Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors | Weng, Q. C.; An, Z. H.; Zhu, Z. Q.; Song, J. D.; Choi, W. J. |
2006-05 | Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure | Nam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H. |
2014-04 | Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy | Lee, D. J.; Park, C. S.; Lee, Cheol Jin; Song, J. D.; Koo, H. C.; Yoon, Chong S.; Yoon, Im Taek; Kim, H. S.; Kang, T. W.; Shon, Yoon |
2013-10-21 | Excited exciton and biexciton localised states in a single quantum ring | Kim, H. D.; Kyhm, K.; Taylor, R. A.; Nicolet, A. A. L.; Potemski, M.; Nogues, G.; Je, K. C.; Lee, E. H.; Song, J. D. |
2014-04 | Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer | Oh, H. J.; Park, S. J.; Lim, J. Y.; Cho, N. K.; Song, J. D.; Lee, W.; Lee, Y. J.; Myoung, J. M.; Choi, W. J. |
2013-04-21 | Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection | Lee, E. H.; Song, J. D.; Yoon, J. J.; Bae, M. H.; Han, I. K.; Choi, W. J.; Chang, S. K.; Kim, Y. D.; Kim, J. S. |
2019-10-16 | Fundamental Limits to Coherent Photon Generation with Solid-State Atomlike Transitions | Koong, Z. X.; Scerri, D.; Rambach, M.; Santana, T. S.; Park, S., I; Song, J. D.; Gauger, E. M.; Gerardot, B. D. |
2014-03 | Growth of catalyst-free GaAs nanowire with As pulse injection for full zinc-blende structure | Yoen, K. H.; Lee, E. H.; Kim, S. Y.; Park, T. E.; Bae, M. H.; Song, J. D. |
2011-09 | Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots | Lim, J. Y.; Song, J. D.; Choi, W. J.; Ahn, J. P.; Yang, H. S. |
2018-11 | Growth of pure wurtzite InGaAs nanowires for photovoltaic and energy harvesting applications | Kang, H. -K.; Kim, J. Y.; Noh, M. -S.; Kang, C. -Y.; Kim, Y. D.; Cho, M. -H.; Song, J. D. |
2011-11 | High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy | Ha, S. K.; Song, J. D.; Han, I. K.; Ko, D. Y.; Kim, S. Y.; Lee, E. H. |
2008-12 | Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots | Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
2014-11-06 | InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K | Park, M. S.; Jain, V.; Lee, E. H.; Kim, S. H.; Pettersson, H.; Wang, Q.; Song, J. D.; Choi, W. J. |
2009-10-19 | Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation | Dasika, V. D.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.; Goldman, R. S. |
2013-03-11 | Interband transitions and dielectric functions of InGaSb alloys | Kim, T. J.; Yoon, J. J.; Byun, J. S.; Hwang, S. Y.; Aspnes, D. E.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.; Barange, N. S.; Kim, J. Y.; Kim, Y. D. |
2009-09-14 | Interband transitions of InAsxSb1-x alloy films | Kim, T. J.; Yoon, J. J.; Hwang, S. Y.; Aspnes, D. E.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Song, J. D. |
2020-03-04 | Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes | Ahn, D.; Song, J. D.; Kang, S. S.; Lim, J. Y.; Yang, S. H.; Ko, S.; Park, S. H.; Park, S. J.; Kim, D. S.; Chang, H. J.; Chang, Joonyeon |
2006-10 | Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots | Lee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A. |
2014-09 | Low gain threshold density of a single InGaP quantum well sandwiched by digital alloy | Kim, B.; Kyhm, K.; Je, K. C.; Song, J. D.; Kim, S. Y.; Le, E. H.; Taylor, R. A. |
2018-08 | Magneto-optical Transitions of GaAs/AlGaAs Multiple Quantum Wells | Kim, Yongmin; Song, J. D.; Kohama, Y. |