Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions

Authors
Kim, S. Y.Song, J. D.Han, I. K.Kim, T. W.
Issue Date
2012-07
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5519 - 5522
Abstract
InP/InGaP quantum structures with 808-nm-wavelength emissions were grown on semi-insulating GaAs (100) substrates via migration-enhanced molecular beam epitaxy. The effects of the growth conditions on the structural and optical properties of the InP/InGaP quantum structures were investigated. The scanning electron microscopy and atomic force microscopy images showed that the two-dimensional InP/InGaP quantum structures were transited to one-dimensional structures with an increasing repetition cycle. The photoluminescence spectra showed that the optical properties of the InP/InGaP quantum structures were significantly affected by various migration-enhanced epitaxy repetition numbers and growth temperatures. These results can help improve understanding of the effects of growth parameters on the structural and optical properties of InP/InGaP quantum structures for 808-nm-wavelength emissions.
Keywords
DIODE-LASERS; POWER; NM; DIODE-LASERS; POWER; NM; InP/InGaP Quantum Structure; Quantum Dash; 808-nm; MEE; MBE
ISSN
1533-4880
URI
https://pubs.kist.re.kr/handle/201004/129089
DOI
10.1166/jnn.2012.6325
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KIST Article > 2012
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