| 2003-11-01 | Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator | Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY; Choi, IH |
| 2005-08 | Ion-beam nano-patterning by using porous anodic alumina as a mask | Shin, SW; Lee, SG; Lee, J; Whang, CN; Lee, JH; Choi, IH; Kim, TG; Song, JH |
| 2001-07 | Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films | Seol, KS; Hiramatsu, H; Ohki, Y; Choi, IH; Kim, YT |
| 1998-04 | Maskless selective epitaxial growth on patterned GaAs substrates by metalorganic chemical vapor deposition | Son, CS; Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1998-01 | One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 | Kim, EK; Kim, TG; Son, CS; Kim, SI; Park, YK; Kim, Y; Min, SK; Choi, IH |
| 2004-10 | Optical properties of ZnO nanocrystals synthesized by using sol-gel method | Chang, HJ; Lu, CZ; Wang, YS; Son, CS; Kim, SI; Kim, YH; Choi, IH |
| 1996-11-30 | Optimization of the GaN-buffer growth on 6H-SiC(0001) | Byun, D; Kim, G; Lim, D; Lee, D; Choi, IH; Park, D; Kum, DW |
| 2003-09-01 | Origin of residual stress in the formation of boron nitride film by sputtering with Ar ions | Kim, HS; Park, JK; Baik, YJ; Choi, IH |
| 2002-05 | Phase evolution of turbostratic boron nitride during the deposition of cubic boron nitride film | Kim, HS; Choi, IH; Baik, YJ |
| 2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
| 1996-08 | Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4 | Son, CS; Kim, SI; Kim, Y; Lee, MS; Kim, MS; Min, SK; Choi, IH |
| 2004-12 | Red emission from Eu-implanted GaN | Son, CS; Kim, SI; Kim, YH; Kim, YT; Choi, IH; Wakahara, A; Tanoue, H; Ogura, M |
| 1998-05 | Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Son, CS; Choi, IH |
| 2004-11 | Sol-gel derived Nd-substituted Bi4Ti3O12 thin film and its electrical properties | Kim, IS; Kim, YM; Choi, IH; Hong, SK; Kim, WS; Il Shim, S; Kim, YT; Kim, YH |
| 2000-02 | SrBi2Ta2O9 thin films grown by MOCVD using a novel double metal alkoxide precursor | Shin, DS; Choi, HS; Kim, YT; Choi, IH |
| 2000-01 | Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy | Kim, JW; Son, CS; Choi, IH; PARK, YOUNG KYUN; Kim, Yong Tae; Ambacher, O; Stutzmann, M |
| 1999-06 | Surface morphology and optical properties of epitaxial AlxGa1-xN | Kim, JW; Choi, IH; Park, YK; Kim, YT |
| 2001-06-01 | The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure | Choi, HS; Kim, EH; Choi, IH; Kim, YT; Choi, JH; Lee, JY |
| 1999 | The phase transition of Bi-Pt alloys at the interface of Pt/SrBi2Ta2O9 and its effect on interface roughness | Shin, DS; Lee, HN; Kim, YT; Park, YK; Choi, IH |
| 1999-07 | Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition | Kim, JW; Park, YK; Kim, YT; Son, CS; Choi, IH; Ambacher, O; Stutzmann, M |
| 2004-10-14 | Two novel mutations of Wiskott-Aldrich syndrome: the molecular prediction of interaction between the mutated WASP L101P with WASP-interacting protein by molecular modeling | Kim, MK; Kim, ES; Kim, DS; Choi, IH; Moon, T; Yoon, CN; Shin, JS |
| 2004-12 | Variable optical attenuator using parallel plate electrostatic actuator | HUR JAE SUNG; 김태엽; Shin, HJ; Moon, S; Choi, IH; Son, CS |
