| - | Large droplet GaAs QDs for the application to single photon source and application of InAs QDs for high-quality growth of InSb on GaAs; magnetic logic devices | SONG, JIN-DONG |
| 2019-12 | Large Magnetoconductance in GaAs Induced by Impact Ionization | Kim, Taeyueb; Joo, Sungjung; Koo, Hyun Cheol; Hong, Jinki |
| 1992-08 | Laser beam process 에 의해 GaAs 에 형성된 결함상태 연구 . | 김은규; 조훈영; 민석기; 최원철; 박종윤; 김현수 |
| 1997-05 | Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases | Kim, MS; Lee, C; Park, SK; Choi, WC; Kim, EK; Kim, SI; Ahn, BS; Min, SK |
| - | Lateral growth rate enhancement on patterned GaAs substrates with CCl//4 by MOCVD. | KIM YOUN; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki |
| - | Lateral mode behavior of GaAs/AlGaAs DH laser diode by computer simulation. | Kim Seong Il; Min Suk-Ki |
| 2006-10 | Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots | Lee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A. |
| 2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
| 1993-05-01 | LOW-TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, C |
| 1993-01 | LPMOCVD 방법에 의한 탄소도핑된 갈륨비소 에피층의 격자 수축 및 임계두께 해석 . | 김성일; 김무성; 민석기 |
| - | Magnetic anisotropy in epitaxial Cobalt film on GaAs(100) substrate | 김경호; Kim Hyung-jun; 김영근; Han, Suk Hee |
| 1998-04 | Maskless selective epitaxial growth on patterned GaAs substrates by metalorganic chemical vapor deposition | Son, CS; Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| - | MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors (invited) | Lee Eunhye; SONG, JIN-DONG; Su youn, Kim; BaeMinHwan; Han, Il Ki; 장수경; Lee, Jung Il; Q. Wang; A. Karim; J. Andersson |
| 2016-05-26 | Memory characteristics of capacitors with poly-GaAs floating gates | Roh, I. P.; Kang, N. S.; Shin, S. H.; Oh, Y. T.; Kim, K. B.; Song, J. D.; Song, Y. H. |
| 1991-04-29 | METASTABLE BEHAVIOR OF DEEP LEVELS IN HYDROGENATED GAAS | CHO, HY; KIM, EK; MIN, SK; CHANG, KJ; LEE, C |
| - | Microstructure and magnetic property of Fe/MgO layer on GaAs and InAs (001) substrates | Kim Kyung-Ho; Kim Hyung-jun; Jun Woo Choi; Chang, Joonyeon; 김영근 |
| - | MOCVD 로 성장시킨 GaAs/AlGaAs DH laser diode 의 발진 특성 및 computer simulation 에 의한 횡모드 거동 . | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
| - | MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | MOCVD 에 의한 화합물반도체 에피 성장 기술 . | Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG |
| - | Modeling for GaAs/AlGaAs buried heterostructure laser diode. | Kim Seong Il; EOM KYUNG SOOK; Min Suk-Ki |
| 1997-04 | Nitridation of Al2O3 and GaAs surfaces by control enhanced ECR plasma | Mutoh, H; OKeeffe, P; Den, S; Komuro, S; Morikawa, T; Park, YJ; Hara, K; Munekata, H; Kukimoto, H |
| 1994-01 | Novel facet evolution of carbon-doped AlGaAs/GaAs multilayers on nonplanar substrate using CCl//4 grown by metalorganic chemical vapor deposition (MOCVD). | 김성일; 민석기; 김용; 김무성; 박양근; 안준오 |
| 1997-03-10 | Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing | Yuan, S; Kim, Y; Jagadish, C; Burke, PT; Gal, M; Zou, J; Cai, DQ; Cockayne, DJH; Cohen, RM |
| - | Novel method for mesa formation utilizing thermally annealed surface QDs | Ha Seung Kyu; SONG, JIN-DONG; Lim Ju-Young; Lee Eunhye; Fabrice Donatini; Samir Bounouar; Le Si Dang; Jean-Philippe Poizat; Jongsu Kim; Choi, Won Jun; Han, Il Ki; Lee, Jung Il |
| 1997-06-30 | Nucleation transitions for InGaAs Islands on vicinal (100) GaAs | Leon, R; Senden, TJ; Kim, Y; Jagadish, C; Clark, A |
| 1998-04 | p-AlGaAs/p-GaAs/n-GaAs 이종접합 태양전지의 구조와 금속전극패턴의 최적화에 관한 분석 | KIM HEO JEN; 이대욱; 김태환; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
| - | Parametric growth of InAlSb meta-morphic buffer layers on GaAs for the application to InSb-based electronic devices | Shin Sang Hoon; SONG, JIN-DONG; Su youn, Kim; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee; T G KIM |
| 2020-04 | Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors | Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Han, JaeHoon; Kim, Hyungjun; Jeong, YeonJoo; Kim, Sang-Hyeon |
| 1989-05-15 | PHOTOQUENCHING EFFECT AND THERMAL RECOVERY PROCESS FOR MIDGAP LEVELS IN GAAS - AN EL2 FAMILY IN GAAS | CHO, HY; KIM, EK; MIN, SK |
| 2023-01 | Post-Annealing Effects on Optical Properties of GaAs/AlGaAs Quantum Dots Grown by Droplet Epitaxy | 서유량; 강태인; 김종수; 송진동; 이상준; 김희대 |
