| 2004-12 | Lattice structural analysis of hydrogen induced defects in SrBi2Nb2O9 thin films | Kim, IS; Kim, YT; Kim, SI; Yoo, DC; Lee, JY |
| 1997-05 | Low contact resistance of n(+)-Si/Ti/WNx/Al submicron contact structures | Kim, YT; Lee, CW |
| 2001-07 | Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films | Seol, KS; Hiramatsu, H; Ohki, Y; Choi, IH; Kim, YT |
| 2005-03 | Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching process | Shim, SI; Kwon, YS; Kim, SI; Kim, YT; Park, JH |
| 1999-06-21 | Memory window of highly c-axis oriented ferroelectric YMnO3 thin films | Lee, HN; Kim, YT; Park, YK |
| 1997-12-15 | Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor | Kim, YT; Shin, DS |
| 2003-08 | Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO2 high-k dielectrics | Youm, M; Sim, HS; Jeon, H; Kim, SI; Kim, YT |
| 2003-07 | Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect | Sim, HS; Kim, SI; Kim, YT |
| 2002-09-02 | Microstructure control of YMnO3 thin films on Si (100) substrates | Yoo, DC; Lee, JY; Kim, IS; Kim, YT |
| 2004-08 | Multiple bit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | Il Shim, S; Kwon, YS; Kim, IS; Kim, SI; Kim, YT; Park, JH |
| 1997-11-15 | Nanostructured Ta-Si-N diffusion barriers for Cu metallization | Kim, DJ; Kim, YT; Park, JW |
| 1997-11-15 | Negative resistance of AlGaAs diodes Co-doped with Si and Mn | Gho, SJ; Park, SH; Lim, H; Choe, BD; Lee, CW; Ko, MK; Kim, YT |
| 1999-07 | New method to prepare W-B+-N ternary barrier to Cu diffusion by implanting BF2+ ions into W-N thin film | Kim, DJ; Kim, YT; Park, JW |
| 2002-11-14 | Novel synthesis of high-capacity cobalt vanadate for use in lithium secondary cells | Kim, YT; Gopukumar; Kim, KB; Cho, BW |
| 2003-11 | Nucleation and grain growth of SrBi2Nb2O9 thin films | Yoo, DC; Lee, JY; Kim, IS; Kim, YT |
| 2004-10-28 | Operation of single transistor type ferroelectric random access memory | Shim, SI; Kim, S; Kim, YT; Park, JH |
| 2004-05 | Oxygen plasma rapid thermal annealing to improve the electrical properties of Pt-SrBi2Nb2O9-SiO2_Si gate structure | Kim, IS; Kim, SI; Kim, YT |
| 2003-05-15 | Performance of electrostatic spray-deposited vanadium pentoxide in lithium secondary cells | Kim, YT; Gopukumar, S; Kim, KB; Cho, BW |
| 2001-12 | Performance of the W-B-N ternary diffusion barrier for Cu metallization | Lee, CW; Kim, YT; Lee, HS; Park, YK; Lee, TH; Chen, Q; Richardson, NV |
| 2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
| 2004-12 | Preparation and characterization of field effect transistor with (Bi,La)Ti3O12 ferroelectric gate material | Chang, HJ; Suh, KM; Park, JH; Gong, SC; Shim, SI; Kim, YT; Son, CS |
| 2004-08-20 | Preparation of chromane derivatives via indium-mediated intramolecular allylation reactions | Cha, JH; Cho, YS; Koh, HY; Lee, E; Kim, YT; Yang, HH; Kang, HY |
| 2005-11 | Pulse plasma assisted atomic layer deposition of W-C-N thin films for Cu interconnects | Kim, YT; Park, JH |
| 2004-12 | Red emission from Eu-implanted GaN | Son, CS; Kim, SI; Kim, YH; Kim, YT; Choi, IH; Wakahara, A; Tanoue, H; Ogura, M |
| 1998-09-30 | Requirement of EGF receptor kinase for signaling by calcium-induced ERK activation and neurite outgrowth in PC12 cells | Park, JG; Jo, Y; Kim, YT; Yoo, YS |
| 2004-07 | Selective etching process of SrBi2Ta2O9 and CeO2 for self-aligned ferroelectric gate structure | Shim, SII; Kwon, YS; Kim, SII; Kim, YT; Park, J.H. |
| 2004-11 | Sol-gel derived Nd-substituted Bi4Ti3O12 thin film and its electrical properties | Kim, IS; Kim, YM; Choi, IH; Hong, SK; Kim, WS; Il Shim, S; Kim, YT; Kim, YH |
| 2000-02 | SrBi2Ta2O9 thin films grown by MOCVD using a novel double metal alkoxide precursor | Shin, DS; Choi, HS; Kim, YT; Choi, IH |
| 2004-09 | Strong blue emission from Er3+ doped in AlxGa1-xN | Wakahara, A; Nakanishi, Y; Fujiwara, T; Okada, H; Yoshida, A; Ohshima, T; Kamiya, T; Kim, YT |
| 1996-01 | Sulfur passivation for thermal stability enhancement of RuO2 Schottky contact on compound semiconductor | Kim, EK; Son, MH; Lee, HN; Kim, YT; Min, SK |
