| 1992-08-03 | NEW METHOD TO IMPROVE THE ADHESION STRENGTH OF TUNGSTEN THIN-FILM ON SILICON BY W2N GLUE LAYER | KIM, YT; LEE, CW; MIN, SK |
| 1994-06-01 | OBSERVATION OF CR3+ ELECTRON-PARAMAGNETIC-RESONANCE CENTER IN GAAS CO-DOPED WITH CR AND IN | PARK, YJ; YEOM, TH; MIN, SK; PARK, IW; CHOH, SH |
| 1995-07 | ORIGIN OF CRYSTALLOGRAPHIC TILT IN INGAAS/GAAS(001) HETEROSTRUCTURE | KANG, JM; SON, CS; KIM, MS; KIM, Y; MIN, SK; KIM, CS |
| 1989-05-15 | PHOTOQUENCHING EFFECT AND THERMAL RECOVERY PROCESS FOR MIDGAP LEVELS IN GAAS - AN EL2 FAMILY IN GAAS | CHO, HY; KIM, EK; MIN, SK |
| 1993-11-29 | PROPERTIES OF THE QUANTUM WIRES GROWN ON V-GROOVED AL0.3GA0.7AS/GAAS SUBSTRATE BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | LEE, MS; KIM, Y; KIM, MS; KIM, SI; MIN, SK; KIM, YD; NAHM, S |
| 1991-08-15 | RAPID THERMAL ANNEALING EFFECTS ON THE PROPERTIES OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED TUNGSTEN FILMS | HONG, JS; KIM, YT; MIN, SK; KANG, TW; HONG, CY |
| 1992-02-15 | ROOM-TEMPERATURE HYDROGENATION EFFECT ON SI-ION-IMPLANTED AND BE-ION-IMPLANTED GAAS | CHO, HY; KIM, EK; LEE, HS; MIN, SK |
| 1992-05 | SCHOTTKY DIODE CHARACTERISTICS AND DEEP LEVELS ON HYDROGENATED N-TYPE GAAS | KIM, EK; CHO, HY; KIM, HS; MIN, SK; KIM, T |
| 1990-09 | SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC; YOO, KH |
| 1995-09-15 | SULFUR AND HYDROGEN PASSIVATION EFFECTS ON THERMAL-STABILITY OF RUO2 SCHOTTKY CONTACT ON N-TYPE GAAS | KIM, EK; SON, MH; PARK, YJ; LEE, JG; MIN, SK |
| 1994 | TEM STUDIES OF PLASMA-DEPOSITED TUNGSTEN AND TUNGSTEN NITRIDE BARRIERS FOR THERMALLY STABLE METALLIZATION | LEE, CW; KIM, YT; MIN, SK; LEE, C; LEE, JY; PARK, TW |
| 1995-03 | TEMPERATURE-DEPENDENT ELECTRICAL-PROPERTIES OF HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, SI; SON, CS; LEE, MS; KIM, Y; KIM, MS; MIN, SK |
| 1995-09-25 | THE FABRICATION OF QUANTUM-WIRE STRUCTURES THROUGH APPLICATION OF CCL4 TOWARDS LATERAL GROWTH-RATE CONTROL OF GAAS ON PATTERNED GAAS SUBSTRATES | KIM, Y; PARK, YK; KIM, MS; KANG, JM; KIM, SI; HWANG, SM; MIN, SK |
| 1994-05 | THE FACET EVOLUTION DURING METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES | KIM, MS; KIM, Y; LEE, MS; PARK, YJ; KIM, SI; MIN, SK |
| 1989-08 | X-RAY AND DLTS CHARACTERIZATIONS OF INXGA1-X AS(X-LESS-THAN-0.03)/GAAS LAYERS GROWN BY VPE USING AN IN/GA ALLOY SOURCE | KIM, HS; KIM, EK; MIN, SK; LEE, CC |
