| 2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
| 2004-12 | Preparation and characterization of field effect transistor with (Bi,La)Ti3O12 ferroelectric gate material | Chang, HJ; Suh, KM; Park, JH; Gong, SC; Shim, SI; Kim, YT; Son, CS |
| 1996-08 | Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4 | Son, CS; Kim, SI; Kim, Y; Lee, MS; Kim, MS; Min, SK; Choi, IH |
| 2004-12 | Red emission from Eu-implanted GaN | Son, CS; Kim, SI; Kim, YH; Kim, YT; Choi, IH; Wakahara, A; Tanoue, H; Ogura, M |
| 1998-05 | Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Son, CS; Choi, IH |
| 2000-01 | Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy | Kim, JW; Son, CS; Choi, IH; PARK, YOUNG KYUN; Kim, Yong Tae; Ambacher, O; Stutzmann, M |
| 1997-11-21 | Temperature-dependent Hall analysis of carbon-doped GaAs | Kim, SI; Son, CS; Chung, SW; Park, YK; Kim, EK; Min, SK |
| 1999-07 | Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition | Kim, JW; Park, YK; Kim, YT; Son, CS; Choi, IH; Ambacher, O; Stutzmann, M |
| 2004-12 | Variable optical attenuator using parallel plate electrostatic actuator | HUR JAE SUNG; 김태엽; Shin, HJ; Moon, S; Choi, IH; Son, CS |
