| 1993-01 | Atomic force microscopic observation in the surface morphologies and roughness of plasma deposited tungsten and tungsten nitride thin films. | Kim Yong Tae; C. S. Kwon; I. H. Choi; C. W. Lee; Min Suk-Ki |
| 1996-01 | Defeat of GaN films on SiC(0001)with GaN buffer layers by MOCVD. | D. Byun; D. Lim; I. H. Choi; D. Park; 김긍호; 금동화 |
| 1995-01 | New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface. | Kim Yong Tae; S. K. Kwak; C. S. Kwon; D. J. Kim; C. W. Lee; I. H. Choi; Min Suk-Ki |
| 1994-01 | Nitrogen implanted tungsten thin films for Cu diffusion barrier. | Kim Yong Tae; D. J. Kim; C. S. Kwon; I. H. Choi; Min Suk-Ki |
| - | Riverbank filtration for water supply along River Nakdong, South Korea | S. K. Maeng; SONG, KYUNG GUEN; I. H. Choi; K. H. Lee |
| - | Self-organized one-dimensional InAs quantum dots on V-grooves. | C. S. Son; I. H. Choi; Kim, Seong Il; Park, Young Ju; Kim, Yong Tae; K. Komori; M. Ogura |
| 1995-01 | The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization. | 김용태; 민석기; C. S. Kwon; I. H. Choi |
| - | The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization. | Kim Yong Tae; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi |
| 1995-01 | The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization. | 김용태; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi |
