| 2004-10 | A new atomic layer deposition of W-N thin films | Sim, HS; 박지호; Kim, YT |
| 2003-10 | A new pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect | Sim, HS; Kim, SI; Jeon, H; Kim, YT |
| 1997-01-13 | Achievement of zero temperature coefficient of resistance with RuOx thin film resistors | Kim, YT |
| 2004-01-05 | An expedient entry to chromane derivatives via indium-mediated intramolecular allenylation reactions | Kang, HY; Kim, YT; Yu, YK; Cha, JH; Cho, YS; Koh, HY |
| 2000-02-28 | An organometallic mercaptopyridine complex with unusual bond shift fluxionality: metal-mediated tautomerism of (pentamethylcyclopentadienyl)bis(pyridine-2-thiolato)rhodium(III) | Jung, OS; Lee, YA; Kim, YT; Chae, HK |
| 2005-03-22 | Asymmetrical increase of memory window in MFIS devices after avalanche electron injection | Lee, KJ; Roh, Y; Kim, IS; Kim, YT |
| 2003-10-15 | Atomic structure of random and c-axis oriented YMnO3 thin films deposited on Si and Y2O3/Si substrates | Kim, YT; Kim, IS; Kim, SI; Yoo, DC; Lee, JY |
| 1998-03 | Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure | Lee, HN; Lim, MH; Kim, YT; Kalkur, TS; Choh, SH |
| 2002-01 | Characteristics of plasma enhanced chemical vapor deposited W-B-N thin films | Kim, DJ; Sim, HS; Kim, SI; Kim, YT; Jeon, H |
| 1999-05 | Characteristics of Pt/SrBi2Ta2O9/Y2O3/Si ferroelectric gate capacitors | Lee, HN; Kim, YT; Choh, SH |
| 2003-02 | Characterization for crystallization of SrBi2Nb2O9 thin films on Si substrates | Yoo, DC; Lee, JY; Sinclair, R; Kim, IS; Kim, YT |
| 1999-07 | Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy | Kim, JW; Son, CS; Choi, IH; Park, YK; Kim, YT; Ambacher, O; Stutzmann, M |
| 2000-02-21 | Comparison of memory effect between YMnO3 and SrBi2Ta2O9 ferroelectric thin films deposited on Si substrates | Lee, HN; Kim, YT; Choh, SH |
| 2004-01-02 | Composite polymer electrolytes reinforced by non-woven fabrics | Song, MK; Kim, YT; Cho, JY; Cho, BW; Popov, BN; Rhee, HW |
| 1999-01 | Correlation between morphological and electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si capacitors | Lee, HN; Choh, SH; Shin, DS; Kim, YT |
| 2005-05-01 | Crystal structure and atomic arrangement of the metastable Ge2Sb2Te5 thin films deposited on SiO2/Si substrates by sputtering method | Park, YJ; Lee, JY; Youm, MS; Kim, YT; Lee, HS |
| 2001-07 | Crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si | Choi, HS; Kim, EH; Choi, IH; Kim, YT; Choi, JH; Lee, JY |
| 2002-01 | Crystallization behavior of ferroelectric YMnO3 thin films on Si(100) substrates | Yoo, DC; Lee, JY; Kim, IS; Kim, YT |
| 2002-12 | Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD | Son, CS; Cho, S; Choi, IH; Kim, SI; Kim, YT; Chung, SW |
| 2004-12 | Deposition-temperature dependence of ZnO/Si grown by pulsed laser deposition | Son, CS; Kim, SM; Kim, YH; Kim, SI; Kim, YT; Yoon, KH; Choi, IH; Lopez, HC |
| 2005-12-05 | Drastic change of electric double layer capacitance by surface functionalization of carbon nanotubes | Kim, YT; Ito, Y; Tadai, K; Mitani, T; Kim, US; Kim, HS; Cho, BW |
| 2004-06 | Effect of Al composition on luminescence properties of rare-earth implanted into AlGaN | Yoshida, A; Wakahara, A; Nakanishi, Y; Okada, H; Ohshima, T; Itoh, H; Kim, YT |
| 2005-01 | Effects of annealing conditions on the crystallization and grain growth of metastable Ge2Sb2Te5 | Park, YJ; Lee, JY; Youm, MS; Kim, YT |
| 1999-09-15 | Effects of Bi-Pt alloy on electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si ferroelectric gate structure | Kim, YT; Shin, DS; Park, YK; Choi, IH |
| 1997-01 | Effects of bottom electrode on the structural and electrical properties of PbTiO3 ferroelectric thin films | Lee, HN; Kim, YT; Choh, SH |
| 2002-06-01 | Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures | Lee, SK; Kim, YT; Kim, SI; Lee, CE |
| 2003-11 | Effects of hydrogen annealing on the electrical properties of SrBi2Nb2O9 thin films | Kim, IS; Kim, YT; Kim, SI; Choi, IH |
| 2003-05 | Effects of implantation conditions on the luminescence properties of Eu-doped GaN | Nakanishi, Y; Wakahara, A; Okada, H; Yoshida, A; Ohshima, T; Itoh, H; Nakao, S; Saito, K; Kim, YT |
| 1998-09 | Effects of morphological changes of Pt/SrBi2Ta2O9 interface on the electrical properties of ferroelectric capacitor | Shin, DS; Lee, HN; Lee, CW; Kim, YT; Choi, IH |
| 2002-06 | Effects of NH3 plasma treatment on methyl silsequioxane for copper multi-level interconnect | Sim, HS; Kim, YT; Jeon, H |
