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Showing results 1 to 19 of 19

Issue DateTitleAuthor(s)
2019-08A First-Principles Study on the Oxygen Adsorption and Interface Characteristics with a-GeO2 of Ge[001] NanowireLiu, Kai; Hwang, Cheol Seong; Choi, Jung-Hae
2003-03-20Application of methane mixed plasma for the determination of Ge, As, and Se in serum and urine by ICP/MSPark, KS; Kim, ST; Kim, YM; Kim, Y; Lee, W
1987-01Characterization of η -channel Ge MOSFETs with gate insulators formed by high pressure thermal oxidation.이정일; E. E. Crisman; P. J. Stiles; O. J. Gregory
2013-05-01Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescenceYang, Changjae; Lee, Sangsoo; Shin, Keun-Wook; Oh, Sewoung; Moon, Daeyoung; Kim, Sung-Dae; Kim, Young-Woon; Kim, Chang-Zoo; Park, Won-kyu; Choi, Won Jun; Park, Jinsub; Yoon, Euijoon
2000-10Defect-related luminescence and carrier transport in Ge-implanted SiO2 layers on n-Si and p-SiLee, WS; Bae, HS; Im, S; Kim, HB; Chae, KH; Whang, CN; Song, JH
2007-12Directed arrangement of Ge quantum dots on Si mesas by selective epitaxial growthKim Hyung-jun; Kang Wang
2022-08Effects of interface atomic rearrangement on band alignments in Ge/a-Al2O3/Au heterostructures from first-principlesEunjung Ko; Choi, Jung-Hae
2010-09-01First-principles study on the formation of a vacancy in Ge under biaxial compressive strainChoi, Jung-Hae; Na, Kwang-Duk; Lee, Seung-Cheol; Hwang, Cheol Seong
-First-principles study on the vacancy formation in Ge under biaxial compressive strainJung-Hae Choi; Na, Kwang Duk; SEUNG CHEOL, LEE; Cheol Seong Hwang
2016-01High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrateSeok, Tae Jun; Cho, Young Jin; Jin, Hyun Soo; Kim, Dae Hyun; Kim, Dae Woong; Lee, Sang-Moon; Park, Jong-Bong; Won, Jung-Yeon; Kim, Seong Keun; Hwang, Cheol Seong; Park, Tae Joo
2018-03Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V TemplatesShim, Jae-Phil; Kim, Han-Sung; Ju, Gunwu; Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hyung-Jun; Kim, Sang-Hyeon
2001-01-15Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-SiLee, WS; Jeong, JY; Kim, HB; Chae, KH; Whang, CN; Im, S; Song, JH
2010-11-29Schottky and tunneling behavior of Fe/MgO/Ge(100) structuresLaloe, J-B; Hickey, M. C.; Chang, J.; Moodera, J. S.
2016-03Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diodeKhurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-Chan; Hong, Hyobong; Choi, Chel-Jong
2015-02Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier DiodeKhurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Kim, Yong-Tae; Choi, Chel-Jong
2006-06-05The challenges in guided self-assembly of Ge and InAs quantum dots on SiZhao, Z. M.; Yoon, T. S.; Feng, W.; Li, B. Y.; Kim, J. H.; Liu, J.; Hulko, O.; Xie, Y. H.; Kim, H. M.; Kim, K. B.; Kim, H. J.; Wang, K. L.; Ratsch, C.; Caflisch, R.; Ryu, D. Y.; Russell, T. P.
1998-12The origin of photoluminescence in Ge-implanted SiO2 layersKim, HB; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JH
-Ultra-Thin Body Ge(110)-OI on Si fabrication from Ge/AlAs/GaAs Substrate via wafer bonding technologyShim Jae Phil; KIM HANSUNG; Ju, Gunwu; Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Sanghyeon Kim; Kim Hyung-jun
2000-01-19Violet and orange luminescence from Ge-implanted SiO2 layersLee, WS; Jeong, JY; Kim, HB; Chae, KH; Whang, CN; Im, S; Song, JH
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