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Characterization of η -channel Ge MOSFETs with gate insulators formed by high pressure thermal oxidation.

Authors

이정일; E. E. Crisman; P. J. Stiles; O. J. Gregory

Issue Date

1987-01

Citation

Electronics letters, v.v. 23, no.no. 1, pp.8 - ?

Keywords

MOSFET; Ge; thermal oxide

URI

https://pubs.kist.re.kr/handle/201004/147746

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KIST Article > Others

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