| 2004-07 | A micro-photoluminescence study of vertically stacked InGaAs-GaAs double-layer quantum dots | Choi, YC; Kim, TG; Park, YM; Park, YJ |
| 2004-06-01 | A technique for the measurement of surface diffusion coefficient and activation energy of Ge adatom on Si(001) | Kim, HJ; Zhao, ZM; Liu, J; Ozolins, V; Chang, JY; Xie, YH |
| 2000-10-16 | Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs | Hyon, CK; Choi, SC; Song, SH; Hwang, SW; Son, MH; Ahn, D; Park, YJ; Kim, EK |
| 2007-01-30 | Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy | Kim, J. H.; Park, Y. J.; Park, Y. M.; Song, J. D.; Lee, J. I.; Kim, T. W. |
| 2007-01 | Computation of the preferential nucleation sites for Ge quantum dots on a relaxed SiGe layer | Shin, Chansun; Jin, Hyungha; Chang, Joonyeon; Kim, Hyungjun; Kim, Wheung Whoe |
| 2001-06 | Defect generation in multi-stacked InAs quantum dot/GaAs structures | Roh, CH; Park, YJ; Kim, KM; Park, YM; Kim, EK; Shim, KB |
| 2003-11 | Detection and volume estimation of semiconductor quantum dots from atomic force microscope images | Oh, S; Hyon, C; Sull, S; Hwang, S; Park, Y |
| 2004-08 | Distribution of Ge self-assembled quantum dots on SixGe1-x buffer layers | Chang, J; Kim, H |
| 2005-03-01 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | Lim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Roh, CH; Hyon, CK; Kim, EK; Yoo, KH |
| 1998-12 | Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots | Cho, S; Hyon, CK; Kim, EK; Min, SK |
| 2005-01 | Effects of Si-doped GaAs layer on optical properties of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Lee, JI; Yoo, KH |
| 2009-01-01 | Effects of the thickness of GaAs spacer layers on the structure of multilayer stacked InAs quantum dots | Kim, Hyung Seok; Suh, Ju Hyung; Park, Chan Gyung; Lee, Sang Jun; Noh, Sam Kyu; Song, Jin Dong; Park, Yong Ju; Choi, Won Jun; Il Lee, Jung |
| 2003-05 | Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots | Lee, CY; Song, JD; Lee, YT; Kim, TW |
| 2004-01-01 | Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2005-03 | Electron-hole separation in InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI |
| 2022-09 | Enhanced Photoluminescence of 1.3μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission | Kim, Yeonhwa; Chu, Rafael Jumar Abella; Ryu, Geunhwan; Woo, Seungwan; Lung, Quang Nhat Dang; Ahn, Dae-Hwan; Han, Jae-Hoon; Choi, Won Jun; Jung, Daehwan |
| 2014-04 | Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer | Oh, H. J.; Park, S. J.; Lim, J. Y.; Cho, N. K.; Song, J. D.; Lee, W.; Lee, Y. J.; Myoung, J. M.; Choi, W. J. |
| 2024-11 | Interfacial characteristics dependence on interruption times in InGaAs/ InAlAs superlattice grown by molecular beam epitaxy | Lee, Won Jun; Seo, Juwon; Shin, Jae Cheol; Han, Il Ki; Kim, Tae Geun; Kang, Joonhyun |
| 2007-08-08 | Optical and structural properties of In0.5Ga0.5As quantum dots with different numbers of stacks grown by atomic layer molecular beam epitaxy: vertical realignment of weakly coupled quantum dots | Kwack, Ho-Sang; Kim, Byoung-O; Cho, Yong-Hoon; Song, Jin-Dong; Choi, Won-Jun; Lee, Jung-Il |
| 2002-11 | Optical properties of In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous droplet epitaxy with post-growth annealing | Lee, CM; Noh, SK; Lee, JI; Lee, DH; Leem, JY; Han, IK; Mano, T; Koguchi, N |
| 2006-06 | Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots | Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I. |
| 2000-09 | Properties of lithographically formed cobalt and cobalt alloy single crystal patterned media | Ganesan, S; Park, CM; Hattori, K; Park, HC; White, RL; Koo, H; Gomez, RD |
| 1997-08-11 | Reversible transition between InGaAs dot structure and InGaAsP flat surface | Ozasa, K; Aoyagi, Y; Park, YJ; Samuelson, L |
| 2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Min, BD; Ahn, D; Park, YJ; Kim, EK |
| 2003-01 | Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles | Kim, KM; Park, YJ; Roh, CH; Park, YM; Kim, EK; Hyon, CK; Park, JH; Kim, TW |
| 2001-03 | Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer | Kim, HJ; Park, YJ; Kim, EK; Kim, TW |
| 2004-11-15 | State filling phenomena in modulation-doped InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2004-09-13 | Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates | Kim, YG; Joh, YS; Song, JH; Sim, ED; Baek, KS; Chang, SK; Lee, JI |
| 1999-09-15 | Stress-driven formation of InGaAs quantum dots on GaAs with sub-micron platinum pattern | Son, MH; Jung, SK; Min, BD; Hyun, CK; Choi, BH; Kim, EK; Kim, Y; Lim, JS |
