| 2005-11 | Performance Improvement of High-Power AlGaAs Lasers | 김경찬; Tae Geun Kim; Yun Mo Sung; Young Chul Choi; 박용주; 한일기; Seung Woong Lee; Gi Won Moon; Sang Ho Yoon; Kee Youn Jang; Jong Ik Park |
| 2004-07 | Photoluminescence and Electromodulation Study of InAs/GaAs Quantum Dots | 김성수; 정현식; 송진동; 박영민; 신재철; 박용주; 최원준; 이정일 |
| 2000-09 | Phtoluminescence spectroscopy of self-assembled InAs quantum dots using a Si-molecular beam | 박영민; 박용주; 김광무; 김은규 |
| 2003-10 | Physical model for low frequency noise in poly-Si resistors and thin-film transistors | 한일기; 최원준; 박용주; 조운조; 이정일; 이명복; Alain Chovet; Jean Brini; Gerard Ghibaudo |
| 2003-11 | Position-controlled one-dimensional InAs quantum dots on V-grooves | 손창식; 조신호; 최인훈; 박용주; 김용태; K. Komori; M. Ogura |
| 2003-02 | Power law in optical response of MODFET's | 최원준; 김회종; 한일기; 조운조; 박용주; 이정일; 김해택; 김동명 |
| 2001-08 | Precise control of strain field for the selective formation of self-assembled InAS/GaAs quantum dots | 박용주; 김광무; 박영민; 김은규 |
| 1998-05 | Raman study of the nitrided GaAs thin layers | 고의관; 박용주; 김은규; 민석기; 조성호 |
| 2002-10 | Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation | H. J. Kim; S. H. Lee; J. Jo; Y. Nishihara; 박용주 |
| 1997-08 | Reversible transition between InGaAs dot structure and InGaAsp flat surface | Kazunari Ozasa; Yoshinobu Aoyagi; 박용주; Lars Samuelson |
| 1995-06 | Role of Cr in a GaAs crystal for obtaining a semi-insulating property. | 박용주; 민석기; 박일우; 염태호; 조성호 |
| 2001-11 | Role of inserting layer controlling wavelength in InGaAs quantum dots | S.K.Park; 박용주; H.J.Kim; J.H.Lee; Y.M.Park; 김은규; 최원준; 한일기; C.Lee |
| 2002-06 | Role of insertion layer controlling wavelength in InGaAs quantum dots | Se-Ki Park; 박용주; Eun Kyu Kim; Chan Jin Park; Hoon Young Cho; Young Soo Lim; Jeong Yong Lee; Cheon Lee |
| 2003-08 | Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots | 송진동; Y. M. Park; J. G. Lim; 신재철; 박용주; 최원준; 한일기; 조운조; 이정일 |
| 2002-08 | Role of thin insertion layer on the optical properties of InGaAs quantum dots | Jung Ho Lee; 최원준; 한일기; 박용주; Eun Kyu Kim; Chong Mu Lee; Hyoun-Woo Kim |
| 1998-01 | Selective formation of In//xGa//1//-//xAs quantum dots by molecular beam epitaxy | 박용주; 한철구; 김광무; 정석구; 김은규; 민석기 |
| 1998-02 | Selective formation of InAs quantum dot structure by molecular beam epitaxy | 한철구; 장영준; 오치성; 박용주; 박경현; 김은규; 민석기; 박정호 |
| 1998-11 | Selective formation of InAs quantum dot structure grown by molecular beam epitaxy | 한철구; 장영준; 오치성; 박용주; 김은규; 민석기; 박경현; 박정호 |
| 2000-08 | Selective formation of InAs self-assembled quantum dots on AFM-patterned GaAs | 현찬경; 박용주; 김은규; 최승철; 송상헌; 황성우; 민병돈; 안도열 |
| 1998-10 | Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga//2O//3 thin film as a mask material | 한철구; 박용주; 김은규; 민석기; 정석구; 박정호 |
| 2000-11 | Selective formation of semiconductor quantum dots for device applications | 김은규; 박용주; 손맹호; 김용 |
| 2000-07 | Selective growth of InAs quantum dots on pattened Si-SiO₂ substrates | 최범호; 박창민; 송상헌; 황성우; 민병돈; 손맹호; 안도열; 박용주; 김은규; 민석기 |
| 2000-07 | Selective growth of InAs quantum dots using AFM-patterned GaAs substrate | 현찬경; 최승철; 송상헌; 황성우; 민병돈; 안도열; 박용주; 김은규 |
| 2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | 현찬경; S.C. Choi; 황성우; 민병돈; 안도열; 박용주; 김은규 |
| 2000-01 | Selective positioning of InAs quantum dots on GaAs substrate directly by atomic force microscope | 현찬경; 최승철; 김광무; 민병돈; 황성우; 안도열; 박용주; 김은규 |
| 1998-01 | Selectively formed InAs quantum dot arrays for device application | 한철구; 박용주; 박경현; 현찬경; 김은규; 민석기; 박정호 |
| 2000-09 | Self-assembled InAs quantum dots on strained InGaAs/GaAs superlattice | 박용주; 김광무; 박영민; 김은규 |
| 2005-06 | Self-Assembled Qauntum Dots | 최원준; 송진동; 박용주; 박영민; 한일기; 이정일 |
| 2003-07 | Self-organized one-dimensional InAs quantum dots on V-grooves. | 손창식; 최인훈; 김성일; 박용주; 김용태; K. Komori; M. Ogura |
| 2003-04 | Semiconductor laser diode die bonding using AuSn solder | 최상현; 배형철; 허두창; 한일기; 조운조; 최원준; 박용주; 이정일; 이천 |
