1998-01 | Selective formation of In//xGa//1//-//xAs quantum dots by molecular beam epitaxy | 박용주; 한철구; 김광무; 정석구; 김은규; 민석기 |
1998-02 | Selective formation of InAs quantum dot structure by molecular beam epitaxy | 한철구; 장영준; 오치성; 박용주; 박경현; 김은규; 민석기; 박정호 |
1998-11 | Selective formation of InAs quantum dot structure grown by molecular beam epitaxy | 한철구; 장영준; 오치성; 박용주; 김은규; 민석기; 박경현; 박정호 |
2000-08 | Selective formation of InAs self-assembled quantum dots on AFM-patterned GaAs | 현찬경; 박용주; 김은규; 최승철; 송상헌; 황성우; 민병돈; 안도열 |
1998-10 | Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga//2O//3 thin film as a mask material | 한철구; 박용주; 김은규; 민석기; 정석구; 박정호 |
2000-11 | Selective formation of semiconductor quantum dots for device applications | 김은규; 박용주; 손맹호; 김용 |
2000-07 | Selective growth of InAs quantum dots on pattened Si-SiO₂ substrates | 최범호; 박창민; 송상헌; 황성우; 민병돈; 손맹호; 안도열; 박용주; 김은규; 민석기 |
2000-07 | Selective growth of InAs quantum dots using AFM-patterned GaAs substrate | 현찬경; 최승철; 송상헌; 황성우; 민병돈; 안도열; 박용주; 김은규 |
2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | 현찬경; S.C. Choi; 황성우; 민병돈; 안도열; 박용주; 김은규 |
2000-01 | Selective positioning of InAs quantum dots on GaAs substrate directly by atomic force microscope | 현찬경; 최승철; 김광무; 민병돈; 황성우; 안도열; 박용주; 김은규 |
1998-01 | Selectively formed InAs quantum dot arrays for device application | 한철구; 박용주; 박경현; 현찬경; 김은규; 민석기; 박정호 |
2000-09 | Self-assembled InAs quantum dots on strained InGaAs/GaAs superlattice | 박용주; 김광무; 박영민; 김은규 |
2005-06 | Self-Assembled Qauntum Dots | 최원준; 송진동; 박용주; 박영민; 한일기; 이정일 |
2003-07 | Self-organized one-dimensional InAs quantum dots on V-grooves. | 손창식; 최인훈; 김성일; 박용주; 김용태; K. Komori; M. Ogura |
2003-04 | Semiconductor laser diode die bonding using AuSn solder | 최상현; 배형철; 허두창; 한일기; 조운조; 최원준; 박용주; 이정일; 이천 |
2002-02 | Semiconductor nanostructure fabrication and its application to the devices | Eun Kyu Kim; Chan Kyeong Hyon; 박용주 |
2003-01 | Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles | 김광무; 박용주; 노정현; 박영민; 김은규; 현찬경; 박정호; 김태환 |
2002-08 | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | 한일기; 최원준; 김회종; 박용주; 조운조; 이정일; Alain Chovet; Jean Brini |
2003-02 | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | 한일기; 최원준; 김회종; 박용주; 조운조; 이정일; Alain Chovet; Jean Brini |
2002-07 | Single electron tunneling effects in a heavily doped n+ GaAs quantum dot | B.H.Choi; S.H.Son; K.H.Cho; S.W.Hwang; D.Ahn; Y.M.Park; 박용주; E.K.Kim |
2002-02 | Single electron tunneling through a highly doped n+ GaAs quantum dot | S.H.Son; B.H.Choi; K.H.Cho; Y.M.Park; 박용주; E.K.Kim; S.W.Hwang; D.Ahn |
2005-05 | Single-crystalline diluted magnetic semiconductor GaN:Mn nanowires | H.J.Choi; H.K.Seong; 장준연; 이경일; 박용주; J.J.Kim; S.K.Lee; R.He; Tevye Kuykendall; Peidong Yang |
2002-12 | Single-electron tunneling through a heavily doped GaAs quantum dot | 손승훈; 최범호; K. H. Cho; 황성우; 박영민; 박용주; 김은규; 안도열 |
2001-03 | Size control of InAs quantum dots on 2˚-off GaAs(100) substrate by the thickness of GaAs buffer layer | 김효진; 박용주; 김은규; 김태환 |
2000-08 | Size control of the micro-crystalline GaN | 노정현; 박용주; 김은규; 노정현; 심광보 |
2003-02 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing | 신재철; 최원준; 한일기; 박용주; 이정일; H.J. Kim; 최정우; 김은규 |
2002-08 | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing technique | J.C. Shin; 최원준; 한일기; 박용주; 이정일; E.K. Kim; H.J. Kim; J.W. Choi |
2003-06 | Spectral response modification of quantum well infrared photodetector by quantum well intermixing. | 신재철; 최원준; 한일기; 박용주; 이정일; 김은규; H.J. Kim; 최정우 |
2003-02 | Spectroscopic ellipsometric properties of Ga1-xFexAs dilute magnetic semiconductors | 이호선; T. D. Kang; 박용주; 오형택; 조훈영; R. Moriya; H. Munekata |
2008-03 | Spin injection into ferromagnetic Co2MnAl by optical absorption in GaAs | Samih Isber; 박용주; Jagadeesh S. Moodera; Don Heiman |