| 1995-01 | New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface. | Kim Yong Tae; S. K. Kwak; C. S. Kwon; D. J. Kim; C. W. Lee; I. H. Choi; Min Suk-Ki |
| 1994-01 | Nitrogen implanted tungsten thin films for Cu diffusion barrier. | Kim Yong Tae; D. J. Kim; C. S. Kwon; I. H. Choi; Min Suk-Ki |
| 1994-01 | Post annealing characteristics of RF magnetron sputtered PbTiO//3 films. | Kim Yong Tae; H. N. Lee; J. G. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki |
| - | Study on physical properties of Cu-CVD for ULSI interconnects. | Kim Yong Tae; Y. S. Kim; S. K. Kwak; C. S. Kwon; D. G. Jung; Min Suk-Ki |
| 1995-01 | The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization. | 김용태; 민석기; C. S. Kwon; I. H. Choi |
| - | The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization. | Kim Yong Tae; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi |
| 1995-01 | The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization. | 김용태; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi |
