Showing results 41 to 70 of 78
Issue Date | Title | Author(s) |
---|---|---|
- | Packaging of electrically switchable tunable lasers | S.H. Cho; S. Fox; Han Il Ki; J.H. Song; Y. Hu; Z.F. Fan; F.G. Johnson; D. Stone; Goetz Erbert; Frank Bugge; M. Dagenais |
- | Performance characteristics of CBE - grwon InGaAs/InGaAsP MQW RWG laser diode with dry etching technique | KPARK KYUNG HYUN; 엄창섭; Han Il Ki; Woo Deok Ha; Kim Sun Ho; CHOI SANG SAM |
- | Photonic control of DC and microwave characteristics in AlGaAs/GaAs/InGaAs double heterostructure pseudomorphic HEMT's. | KIM HWE JONG; Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; S. J. Kim; D. M. Kim; H. Chung; S. I. Kim; S. H. Kim; K. Cho |
- | Photonic control of p-channel double heterojunction MODFET | KIM HWE JONG; Lee Jung Il; 김동명; Han Il Ki; Jacques Zimmermann |
- | Photonics DC and microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET. | KANG KWANG NHAM; KIM HWE JONG; S. H. Song; D. M. Kim; Han Il Ki; Lee Jung Il; S. H. Kim; S. S. Choi; K. Cho |
- | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering | Choi Won Jun; 한상민; S.I. Shah; CHOI SUKGEUN; Woo Deok Ha; Lee Seok; KIM HWE JONG; Han Il Ki; Lee Jung Il; KANG KWANG NHAM; 조재원 |
- | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing Si-rich SiN capping layer for dielectric cap quantum well disordering | Choi Won Jun; KIM HWE JONG; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
- | RIE 로 처리된 GaAs 표면의 전기적 특성연구 . | Kim Seong Il; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; 조준환; 임한조; Yoo Jong Lee; LEE MYOUNG BOG |
- | Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots | SONG JIN-DONG; Y. M. Park; J. G. Lim; Shin Jae Cheol; Park Young Ju; Choi Won Jun; Han Il Ki; Cho Woon Jo; Lee Jung Il |
- | Role of thin insertion layer on the optical properties of InGaAs quantum dots | Jung Ho Lee; Choi Won Jun; Han Il Ki; Park Young Ju; Eun Kyu Kim; Chong Mu Lee; Hyoun-Woo Kim |
- | Schottky barrier enhancement of InGaAs with SiNx grown by PECVD. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 박홍이; Han Il Ki |
- | Semiconductor laser diode die bonding using AuSn solder | 최상현; 배형철; Heo Duchang; Han Il Ki; Cho Woon Jo; Choi Won Jun; Park Young Ju; Lee Jung Il; 이천 |
- | Si-rich SiN를 이용한 GaAs/AlGaAs 다층 양자 우물에서 Al-Ga 상호 확산의 감소 | Choi Won Jun; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Woo Deok Ha; Han Il Ki; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
- | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | Han Il Ki; Choi Won Jun; KIM HWE JONG; Park Young Ju; Cho Woon Jo; Lee, Jung Il; Alain Chovet; Jean Brini |
- | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing technique | J.C. Shin; Choi Won Jun; Han Il Ki; Park Young Ju; Lee Jung Il; E.K. Kim; H.J. Kim; J.W. Choi |
- | Spectral response modification of quantum well infrared photodetector by quantum well intermixing. | Shin Jae Cheol; Choi Won Jun; Han Il Ki; Park Young Ju; Lee Jung Il; KIM EUN KYU; H.J. Kim; 최정우 |
- | Spectroscopic ellipsometry measurements on the silicon nitride films formed by PECVD in InP. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; 김상열 |
- | Study on the characteristics of InGaAsP/InGaAs MQW-LD with differently p-doped and asymmetric structures | Han Il Ki; Heo Duchang; Choi Won Jun; Lee Jung Il; 이주인 |
- | Surface passivated InP MSM schottky diodes. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Y. J.Lee; G. H. Park; H. L. Park |
- | Temperature characteristics of InGaAs/InGaAsP MQW laser diode grown by chemical beam epitaxy | 엄창섭; KPARK KYUNG HYUN; Byun Young Tae; Han Il Ki; Woo Deok Ha; Kim Sun Ho; Lee Jung Il; PARK JEONG HO |
- | Temperature dependence of low frequency noise mechanisms in schottky barrier structure | Lee Jung Il; Han Il Ki; J. Brini; A. Chovet; C. A. Dimitriadis |
- | The characteristics of In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors illuminated by laser | KIM JONG WOOK; 강현일; 오재응; KIM HWE JONG; Choi Won Jun; Lee Seok; Han Il Ki; Woo Deok Ha; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM |
- | The exchange of P and As in chemical beam epitaxy growth | CHOI SUKGEUN; Woo Deok Ha; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 김영동 |
- | Theoretical model for tunable DBR laser. | KANG KWANG NHAM; Lee Jung Il; Lee Seok; Han Il Ki |
- | Theoretical studies of GaAs schottky contact traveling wave optical modulator. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; W. J. Choi; S. Hong |
- | Thermal treatment of InGaAs/GaAs self-assembled quantum dots with SiNx and SiO ₂ capping layers | J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Lee Jung Il; Cho Woon Jo; E.K. Kim; C.M. Lee; H.-W. Kim |
- | X-ray study of strained InGaAs/InGaAsP superlattice | 오문성; Woo Deok Ha; 고은하; Han Il Ki; Lee Seok; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; 김영동 |
- | 연속 파장 가변시 비선형 이득이 다전극 DBR 레이저의 잡음 특성에 미치는 영향 . | KANG KWANG NHAM; Choi Won Jun; Lee Seok; Kim Sun Ho; KIM HWE JONG; Woo Deok Ha; Lee Jung Il; Han Il Ki |
- | 짧은 게이트 길이를 갖는 HEMT 의 해석적 모델 . | Kim Sung Jin; KIM HWE JONG; Woo Deok Ha; Lee Seok; Choi Won Jun; Han Il Ki; Kim Sun Ho; KANG KWANG NHAM; 김동명 |
- | (Undefined) | Lee Seok; Woo Deok Ha; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM |