Browsing byAuthorKANG KWANG NHAM
Showing results 30 to 59 of 73
| Issue Date | Title | Author(s) |
|---|---|---|
| - | Measurement of propagation losses and reflective of MQW electroabsorption waveguides using photocurrent. | KANG BYUNG-KWON; 박승한; PARK YOON HO; Byun Young Tae; KIM HWE JONG; Choi Won Jun; Woo Deok Ha; Lee Seok; Kim Sun Ho; KANG KWANG NHAM |
| - | Modeling of fixed type passive elements for ultra-high frequency IC design up to 18GHz. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; Yoo Jong Lee; 홍성훈; 김봉열 |
| - | Optical controlled AlGaAs/GaAs pseudomorphic MODFET | KIM HWE JONG; 송상호; 김동명; Woo Deok Ha; Lee Seok; Choi Won Jun; Han Il Ki; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 조규만 |
| - | Optical properties of (GaAs)n(AlAs)n superlattices and the Al//0//.//5Ga//0//.//5As random alloy. | CHOI SUKGEUN; KANG KWANG NHAM; 김영동; SEOK JOO YI; 우종천; 유상덕; D. E. Aspnes; Woo Deok Ha; Kim Sun Ho |
| - | Optical responses of Al0.3Ga0.7As/GaAs/In0.13Ga0.87As double heterojunction pseudomorphic MODFET | KIM HWE JONG; 김동명; 정해양; Woo Deok Ha; Choi Won Jun; Lee Seok; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; 조규만 |
| - | Optical studies on a series of AlAs/GaAs short period superlattices | Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Seok; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; M.S. Oh; Y.D. Kim; S.G. Choi; E.H. Koh; S.J. Rhee; J.C. Woo |
| - | PECVD 방법으로 SiN 박막을 성장함으로써 얻어지는 양자우물 무질서화 및 양자우물의 Al 확산계수의 계산 . | Choi Won Jun; Lee Seok; Jingming Zhang; Lee Jung Il; KIM YOUN; KANG KWANG NHAM; KIM SANG KUK; 조규만 |
| - | Photonic control of DC and microwave characteristics in AlGaAs/GaAs/InGaAs double heterostructure pseudomorphic HEMT's. | KIM HWE JONG; Woo Deok Ha; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; S. J. Kim; D. M. Kim; H. Chung; S. I. Kim; S. H. Kim; K. Cho |
| - | Photonics DC and microwave characteristics of AlGaAs/GaAs/InGaAs pseudomorphic MODFET. | KANG KWANG NHAM; KIM HWE JONG; S. H. Song; D. M. Kim; Han Il Ki; Lee Jung Il; S. H. Kim; S. S. Choi; K. Cho |
| - | Quantum well disordering by using plasma enhanced chemical vapor deposited SiN//x film as a capping layer. | KANG KWANG NHAM; W. J. Choi; S. Lee; Y. Kim; Lee Jung Il; S. K. Kim |
| - | Quantum well disordering of low temperature grown GaAs capped multiple quantum well with SiO//2 capping layer | Choi Won Jun; 한상민; I. Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM |
| - | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering | Choi Won Jun; 한상민; S.I. Shah; CHOI SUKGEUN; Woo Deok Ha; Lee Seok; KIM HWE JONG; Han Il Ki; Lee Jung Il; KANG KWANG NHAM; 조재원 |
| - | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing Si-rich SiN capping layer for dielectric cap quantum well disordering | Choi Won Jun; KIM HWE JONG; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
| - | Reduction of saturated transconductance in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee |
| - | RIE 로 처리된 GaAs 표면의 전기적 특성연구 . | Kim Seong Il; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; 조준환; 임한조; Yoo Jong Lee; LEE MYOUNG BOG |
| - | Schottky barrier enhancement of InGaAs with SiNx grown by PECVD. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 박홍이; Han Il Ki |
| 1992-01 | Semiconductor optical switch with MOCVD-grown low barrier quantum wells. | KANG KWANG NHAM; B. K. Kim; S. W. Lee; T. K. Kim; K. U. Chu; O |
| - | Si-rich SiN를 이용한 GaAs/AlGaAs 다층 양자 우물에서 Al-Ga 상호 확산의 감소 | Choi Won Jun; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Woo Deok Ha; Han Il Ki; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
| - | Spectroscopic ellipsometry measurements on the silicon nitride films formed by PECVD in InP. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; 김상열 |
| - | Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy | Woo Deok Ha; 오문성; 고은하; 양지상; Kim Sun Ho; KANG KWANG NHAM; 김영동 |
| - | Surface passivated InP MSM schottky diodes. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Y. J.Lee; G. H. Park; H. L. Park |
| - | The characteristics of In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors illuminated by laser | KIM JONG WOOK; 강현일; 오재응; KIM HWE JONG; Choi Won Jun; Lee Seok; Han Il Ki; Woo Deok Ha; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM |
| - | The exchange of P and As in chemical beam epitaxy growth | CHOI SUKGEUN; Woo Deok Ha; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 김영동 |
| - | Theoretical model for tunable DBR laser. | KANG KWANG NHAM; Lee Jung Il; Lee Seok; Han Il Ki |
| - | Theoretical studies of GaAs schottky contact traveling wave optical modulator. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; W. J. Choi; S. Hong |
| - | THz-class short-pulse generation in mode-locked laser diodes with periodically sampled gratings | 김병성; 정영철; Lee Seok; Kim Sun Ho; KANG KWANG NHAM; CHOI SANG SAM |
| - | X-ray study of strained InGaAs/InGaAsP superlattice | 오문성; Woo Deok Ha; 고은하; Han Il Ki; Lee Seok; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; 김영동 |
| - | 비선형 이득 효과가 파장 가변 다전극 DBR 레이저의 특성에 미치는 영향 . | KIM HWE JONG; Lee Seok; Lee Jung Il; KANG KWANG NHAM; Choi Won Jun; 박홍이 |
| - | 양자우물 무질서화된 GaAs/AlGaAs 다중 양자우물의 운반자 수명 . | KANG KWANG NHAM; Woo Deok Ha; Lee Seok; Choi Won Jun; KIM SANG KUK; Lee Jung Il; 조규만; 김동호; 추장희; 유성규; SEO JEONG CHEOL |
| - | 연속 파장 가변시 비선형 이득과 굴절률 효과가 다전극 DBR 레이저의 변조 특성에 미치는 영향 . | KIM HWE JONG; Lee Seok; Woo Deok Ha; Lee Jung Il; KANG KWANG NHAM |
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