Browsing byAuthorKANG KWANG NHAM
Showing results 39 to 68 of 73
| Issue Date | Title | Author(s) |
|---|---|---|
| - | Quantum well disordering by using plasma enhanced chemical vapor deposited SiN//x film as a capping layer. | KANG KWANG NHAM; W. J. Choi; S. Lee; Y. Kim; Lee Jung Il; S. K. Kim |
| - | Quantum well disordering of low temperature grown GaAs capped multiple quantum well with SiO//2 capping layer | Choi Won Jun; 한상민; I. Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM |
| - | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering | Choi Won Jun; 한상민; S.I. Shah; CHOI SUKGEUN; Woo Deok Ha; Lee Seok; KIM HWE JONG; Han Il Ki; Lee Jung Il; KANG KWANG NHAM; 조재원 |
| - | Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing Si-rich SiN capping layer for dielectric cap quantum well disordering | Choi Won Jun; KIM HWE JONG; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Lee Seok; Woo Deok Ha; Han Il Ki; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
| - | Reduction of saturated transconductance in LDD MOSFETs. | KANG KWANG NHAM; Lee Jung Il; LEE MYOUNG BOG; Yoo Jong Lee |
| - | RIE 로 처리된 GaAs 표면의 전기적 특성연구 . | Kim Seong Il; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; 조준환; 임한조; Yoo Jong Lee; LEE MYOUNG BOG |
| - | Schottky barrier enhancement of InGaAs with SiNx grown by PECVD. | KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 박홍이; Han Il Ki |
| 1992-01 | Semiconductor optical switch with MOCVD-grown low barrier quantum wells. | KANG KWANG NHAM; B. K. Kim; S. W. Lee; T. K. Kim; K. U. Chu; O |
| - | Si-rich SiN를 이용한 GaAs/AlGaAs 다층 양자 우물에서 Al-Ga 상호 확산의 감소 | Choi Won Jun; 한상민; Syed ljaz Shah; CHOI SUKGEUN; Woo Deok Ha; Han Il Ki; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM |
| - | Spectroscopic ellipsometry measurements on the silicon nitride films formed by PECVD in InP. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; 김상열 |
| - | Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy | Woo Deok Ha; 오문성; 고은하; 양지상; Kim Sun Ho; KANG KWANG NHAM; 김영동 |
| - | Surface passivated InP MSM schottky diodes. | KANG KWANG NHAM; Lee Jung Il; Choi Won Jun; Han Il Ki; Y. J.Lee; G. H. Park; H. L. Park |
| - | The characteristics of In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors illuminated by laser | KIM JONG WOOK; 강현일; 오재응; KIM HWE JONG; Choi Won Jun; Lee Seok; Han Il Ki; Woo Deok Ha; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM |
| - | The exchange of P and As in chemical beam epitaxy growth | CHOI SUKGEUN; Woo Deok Ha; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; 김영동 |
| - | Theoretical model for tunable DBR laser. | KANG KWANG NHAM; Lee Jung Il; Lee Seok; Han Il Ki |
| - | Theoretical studies of GaAs schottky contact traveling wave optical modulator. | KANG KWANG NHAM; Lee Jung Il; Han Il Ki; W. J. Choi; S. Hong |
| - | THz-class short-pulse generation in mode-locked laser diodes with periodically sampled gratings | 김병성; 정영철; Lee Seok; Kim Sun Ho; KANG KWANG NHAM; CHOI SANG SAM |
| - | X-ray study of strained InGaAs/InGaAsP superlattice | 오문성; Woo Deok Ha; 고은하; Han Il Ki; Lee Seok; KIM HWE JONG; Kim Sun Ho; Lee Jung Il; KANG KWANG NHAM; 김영동 |
| - | 비선형 이득 효과가 파장 가변 다전극 DBR 레이저의 특성에 미치는 영향 . | KIM HWE JONG; Lee Seok; Lee Jung Il; KANG KWANG NHAM; Choi Won Jun; 박홍이 |
| - | 양자우물 무질서화된 GaAs/AlGaAs 다중 양자우물의 운반자 수명 . | KANG KWANG NHAM; Woo Deok Ha; Lee Seok; Choi Won Jun; KIM SANG KUK; Lee Jung Il; 조규만; 김동호; 추장희; 유성규; SEO JEONG CHEOL |
| - | 연속 파장 가변시 비선형 이득과 굴절률 효과가 다전극 DBR 레이저의 변조 특성에 미치는 영향 . | KIM HWE JONG; Lee Seok; Woo Deok Ha; Lee Jung Il; KANG KWANG NHAM |
| - | 연속 파장 가변시 비선형 이득이 다전극 DBR 레이저의 잡음 특성에 미치는 영향 . | KANG KWANG NHAM; Choi Won Jun; Lee Seok; Kim Sun Ho; KIM HWE JONG; Woo Deok Ha; Lee Jung Il; Han Il Ki |
| - | 저온 성장 GaAs/AlGaAs 다중양자우물구조의 유전체 덮개 양자우물 무질서화 . | 한상민; KANG KWANG NHAM; Choi Won Jun; Lee Seok; Woo Deok Ha; KIM SANG KUK; Kim Sun Ho; 조재원 |
| - | 짧은 게이트 길이를 갖는 HEMT 의 해석적 모델 . | Kim Sung Jin; KIM HWE JONG; Woo Deok Ha; Lee Seok; Choi Won Jun; Han Il Ki; Kim Sun Ho; KANG KWANG NHAM; 김동명 |
| - | (Undefined) | KANG KWANG NHAM; Choi Won Jun; Lee Seok; KIM YOUN; KIM SANG KUK; 조규만; Lee Jung Il |
| - | (Undefined) | Lee Seok; Woo Deok Ha; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM |
| - | (Undefined) | Woo Deok Ha; CHOI SUKGEUN; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Seok; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM |
| - | (Undefined) | 조성호; KIM HWE JONG; Han Il Ki; Choi Won Jun; Lee Seok; Woo Deok Ha; Kim Sun Ho; KANG KWANG NHAM; CHOI SANG SAM; 윤태훈 |
| - | (Undefined) | 조성호; KIM HWE JONG; 김필수; 오차환; Lee Seok; Han Il Ki; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM; Choi Won Jun; Woo Deok Ha; 윤태훈 |
| - | (Undefined) | 한상민; Woo Deok Ha; Lee Seok; Choi Won Jun; Kim Sun Ho; KANG KWANG NHAM; 조제원 |
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