Browsing byAuthor임한조

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 1 to 10 of 10

Issue DateTitleAuthor(s)
1991-01A modeling on gate voltage dependence of series resistance for GaAs MESFET's and the parameter extraction utilizing the gate probe model.강광남; 이정일; 양진모; 임한조; 이유종
1991-01A study on the interface states and capacitance-voltage behavior of InP MIS diode fabricated by plasma assisted oxidation.강광남; 이정일; 이명복; 임한조; J. A. Baglio; N. Decola
-Charge trapping instabilities in SiO2/InP MIS structures.KANG KWANG NHAM; Lee Jung Il; 최병두; KIM CHOONG HWAN; 임한조; Han Il Ki
-Disordering of InGaAs/GaAs multi-quantum well structure by impurity-free vacancy diffusion for advanced optoelectronic devices and their integration유재수; 김종민; 이용탁; SONG, JIN-DONG; 임한조
-Electrical properties of SiNx/InP structure.KANG KWANG NHAM; Lee Jung Il; KIM CHOONG HWAN; 권상덕; 최병두; 임한조; Han Il Ki
1990-01Electron irradiation induced defects in GaAs - I. Simple intrinsic defects.강광남; 박해용; 임한조
2003-12Quantum dots and wires소대섭; 강상규; 최붕기; 이정일; 임한조
-RIE 로 처리된 GaAs 표면의 전기적 특성연구 .Kim Seong Il; Han Il Ki; Choi Won Jun; Lee Jung Il; KANG KWANG NHAM; 조준환; 임한조; Yoo Jong Lee; LEE MYOUNG BOG
2003-06나노 포토닉스 : 과거, 현재, 미래이정일; 조운조; 임한조
1994-12황처리가 Metal/InP 와 Si//3N//4/InP 계면에 미치는 영향 .강광남; 이정일; 한일기; 허준; 임한조; 김충환

BROWSE