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Showing results 1 to 21 of 21

Issue DateTitleAuthor(s)
1991-01A modeling on gate voltage dependence of series resistance for GaAs MESFET's and the parameter extraction utilizing the gate probe model.강광남; 이정일; 양진모; 임한조; 이유종
1991-01A study on the interface states and capacitance-voltage behavior of InP MIS diode fabricated by plasma assisted oxidation.강광남; 이정일; 이명복; 임한조; J. A. Baglio; N. Decola
1992-01Charge trapping instabilities in SiO2/InP MIS structures.강광남; 이정일; 최병두; 김충환; 임한조; 한일기
2005-03Disordering of InGaAs/GaAs multi-quantum well structure by impurity-free vacancy diffusion for advanced optoelectronic devices and their integration유재수; 김종민; 이용탁; 송진동; 임한조
2003-02Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering유재수; 송진동; 이용탁; 임한조
1992-01Electrical properties of SiNx/InP structure.강광남; 이정일; 김충환; 권상덕; 최병두; 임한조; 한일기
1990-01Electron irradiation induced defects in GaAs - I. Simple intrinsic defects.강광남; 박해용; 임한조
1990-01Electron irradiation induced defects in GaAs - II. Complex defects.강광남; 박해용; 임한조
2005-02Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries유재수; 송진동; 이용탁; 임한조
2006-10Fabrication of the uniform CdTe quantum dot array on GaAs substrate utilizing nanoporus alumina masks정미; 이홍석; 박홍이; 임한조; 모선일
2003-02Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures.유재수; 송진동; 이용탁; 임한조
2003-04Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annea유재수; 송진동; 김종민; 배성주; 이용탁; 임한조
2005-08Influence of impurity-free vacancy diffusion on the optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells electroabsorption modulator structure유재수; 송진동; 이용탁; 임한조
2004-01Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers유재수; 송진동; 김종민; 이용탁; 임한조
2002-03Photonic band gap formation by microstrip ring: a way to reduce the size of microwave photonic band gap structures기철식; 장미영; 박익모; 임한조; 김재운; 박해용; 이정일
2003-12Quantum dots and wires소대섭; 강상규; 최붕기; 이정일; 임한조
1990-01RIE 로 처리된 GaAs 표면의 전기적 특성연구 .김성일; 한일기; 최원준; 이정일; 강광남; 조준환; 임한조; 이유종; 이명복
1997-05Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy한일기; 김은규; 이정일; 김선호; 강광남; 김영태; 임한조; 박홍이
1996-10Thermal stability of sulfur-treated InP investigated by photoluminescence한일기; 우덕하; 김회종; 김은규; 이정일; 김선호; 강광남; 임한조; 박홍이
2003-06나노 포토닉스 : 과거, 현재, 미래이정일; 조운조; 임한조
1994-12황처리가 Metal/InP 와 Si//3N//4/InP 계면에 미치는 영향 .강광남; 이정일; 한일기; 허준; 임한조; 김충환