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Showing results 1 to 6 of 6

Issue DateTitleAuthor(s)
-Characteristics of silicon oxide films prepared by chemical vapor deposition and dry oxidation method using ECR plasma sources.JEON BUP JU; 허정수; 윤용수; 정일현; Oh In Hwan; Lim Tae Hoon
1997-07Characteristics of silicon oxide films prepared by chemical vapor deposition using ECR plasma source오인환; 전법주; 임태훈; 정일현
-Effect of silicon orientation on the electrical properties of SiO//2 using oxygen plasma.Oh In Hwan; Lim Tae Hoon; 허정수; JEON BUP JU; 정일현
1997-06Effects on the oxidation rate with silicon orientation and its surface morphology전법주; 오인환; 임태훈; 정일현
-Electrical characteristics of silicon oxide films prepared by chemical vapor deposition method using ECR plama sources.JEON BUP JU; 허정수; 윤용수; 정일현; Oh In Hwan; Lim Tae Hoon
-Preparation of silicon oxide films using electron cyclotron resonance oxygen plasma허정수; JEON BUP JU; 윤용수; 정일현; Oh In Hwan; Lim Tae Hoon
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