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Characteristics of silicon oxide films prepared by chemical vapor deposition using ECR plasma source

Other Titles

ECR 플라즈마를 이용한 화학증착법에 의해 제조된 실리콘 산화막의 특성

Authors

오인환; 전법주; 임태훈; 정일현

Issue Date

1997-07

Citation

화학공학 = Journal of the Korean institute of chemical engineers, v.35, no.3, pp.374 - 379

Keywords

electron cyclotron resonance; chemical vapor deposition; microwave power

URI

https://pubs.kist.re.kr/handle/201004/143707

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KIST Article > Others

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